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TE/TM polarisation response of InAs/GaAs quantum dot bilayers
22 Oct 2015 | Presentation Materials | Contributor(s): Muhammad Usman
Quantum dot bilayers are strong candidates for the design of telecom devices working at 1300 nm wavelength range. Here we analyse - both experimentally and theoretically - their optical and polarisation properties.
Bismide Semiconductors: Revolutionising Telecom Lasers
19 Oct 2015 | Papers | Contributor(s): Muhammad Usman, Christopher A Broderick, Eoin P O\'reilly
Today’s telecomm lasers are plagued with Auger-related losses, which significantly reduce their efficiency and make device cooling essential. We are proposing a radical change in the laser technology by developing a new class of materials, bismide semiconductors. These novel nanomaterials can efficiently suppress the Auger-related loss mechanisms and therefore can lead to the realization of highly efficient and temperature stable GaAs-based photonic devices operating at telecomm and...
Electronic Structure Theory of Dilute Impurity Alloys: GaBiP and GaBiAs
18 Jan 2013 | Online Presentations | Contributor(s): M. Usman
Why quantum dot simulation domain must contain multi-million atoms?
11 Jan 2013 | Online Presentations | Contributor(s): Muhammad Usman
Excited State Spectroscopy of a Quantum Dot Molecule
Quantum Dot based Photonic Devices
01 Apr 2012 | Online Presentations | Contributor(s): Muhammad Usman
NEMO3D User Guide for Quantum Dot Simulations
29 Nov 2011 | Papers | Contributor(s): M. Usman, Gerhard Klimeck
Polarization Response of Multi-layer InAs Quantum Dot Stacks
25 Oct 2011 | Online Presentations | Contributor(s): Muhammad Usman
Quantitative Modeling and Simulation of Quantum Dots
18 Apr 2011 | Presentation Materials | Contributor(s): Muhammad Usman
Self-Assembled Quantum Dot Structure (pyramid)
02 Feb 2011 | Animations | Contributor(s): Gerhard Klimeck, Insoo Woo, Muhammad Usman, David S. Ebert
Self-Assembled Quantum Dot Wave Structure
31 Jan 2011 | Animations | Contributor(s): Gerhard Klimeck, Insoo Woo, Muhammad Usman, David S. Ebert
Nanoelectronic Modeling Lecture 32: Strain Layer Design through Quantum Dot TCAD
04 Aug 2010 | Online Presentations | Contributor(s): Gerhard Klimeck, Muhammad Usman
This presentation demonstrates the utilization of NEMO3D to understand complex experimental data of embedded InAs quantum dots that are selectively overgrown with a strain reducing InGaAs layer. Different alloy concentrations of the strain layer tune the optical emission and absorption wavelength of the quantum dots. The role of the non-linear strain behavior ovserved in the experimental data is explored in NEMO3D. The simulation engine serves as a virtual microscope to understand the interplay of disorder, strain, and quantum dot shape.
Atomistic Simulation of Realistically Sized Nanodevices Using NEMO 3-D—Part II: Applications
5.0 out of 5 stars
14 Jan 2008 | Papers | Contributor(s): Gerhard Klimeck, Shaikh S. Ahmed, Neerav Kharche, Marek Korkusinski, Muhammad Usman, marta prada, Timothy Boykin