Self-Assembled Quantum Dot Wave Structure
31 Jan 2011 | Animations | Contributor(s): Gerhard Klimeck, Insoo Woo, Muhammad Usman, David S. Ebert
A 20nm wide and 5nm high dome shaped InAs quantum dot grown on GaAs and embedded in InAlAs is visualized.
Quantitative Modeling and Simulation of Quantum Dots
18 Apr 2011 | Presentation Materials | Contributor(s): Muhammad Usman
Quantum dots grown by self-assembly process are typically constructed by 50,000 to 5,000,000 structural atoms which confine a small, countable number of extra electrons or holes in a space that is comparable in size to the electron wavelength. Under such conditions quantum dots can be interpreted …
Atomistic Simulation of Realistically Sized Nanodevices Using NEMO 3-D—Part II: Applications
14 Jan 2008 | Publications | Contributor(s): Gerhard Klimeck, Shaikh S. Ahmed, Neerav Kharche, Marek Korkusinski, Muhammad Usman, marta prada, Timothy Boykin
In part I, the development and deployment of a general nanoelectronic modeling tool (NEMO 3-D) has been discussed. Based on the atomistic valence-force field and the sp3d5s* nearest neighbor tight-binding models, NEMO 3-D enables the computation of strain and electronic structure in nanostructures …
NEMO3D User Guide for Quantum Dot Simulations
29 Nov 2011 | Publications | Contributor(s): M. Usman, Gerhard Klimeck
NEMO 3D is a large and complex simulator; and understanding of its source code requires considerable knowledge of quantum mechanics, condensed matter theory, and parallel programming.
Nanoelectronic Modeling Lecture 32: Strain Layer Design through Quantum Dot TCAD
07 Jul 2010 | Online Presentations | Contributor(s): Gerhard Klimeck, Muhammad Usman
This presentation demonstrates the utilization of NEMO3D to understand complex experimental data of embedded InAs quantum dots that are selectively overgrown with a strain reducing InGaAs layer. Different alloy concentrations of the strain layer tune the optical emission and absorption wavelength …
Self-Assembled Quantum Dot Structure (pyramid)
01 Feb 2011 | Animations | Contributor(s): Gerhard Klimeck, Insoo Woo, Muhammad Usman, David S. Ebert
Pyramidal InAs Quantum dot. The quantum dot is 27 atomic monolayers wide at the base and 15 atomic monolayers tall.
Quantum Dot based Photonic Devices
19 Mar 2012 | Online Presentations | Contributor(s): Muhammad Usman
Deployment of nanometer-sized semiconductor quantum dots (QDs) in the active region of
photonic devices such as lasers, semiconductor optical amplifiers (SOA's), photo-detectors etc.
for the next generation communication systems offers unique characteristics such as
Polarization Response of Multi-layer InAs Quantum Dot Stacks
20 Oct 2011 | Online Presentations | Contributor(s): Muhammad Usman
Recent experimental measurements, without any theoretical guidance, showed that isotropic polarization response can be achieved by increasing the number of QD layers in a QD stack. In this work, we analyse the polarization response of multi-layer quantum dot stacks containing up to nine quantum dot …
Excited State Spectroscopy of a Quantum Dot Molecule
16 Dec 2011 | Online Presentations | Contributor(s): Muhammad Usman
Atomistic electronic structure calculations are performed to study the coherent inter-dot couplings of the electronic states in a single InGaAs quantum dot molecule. The experimentally observed excitonic spectrum by Krenner et al (Phys. Rev. Lett. 94 057402, 2005) is quantitatively reproduced, and …
Electronic Structure Theory of Dilute Impurity Alloys: GaBiP and GaBiAs
28 Oct 2011 | Online Presentations | Contributor(s): M. Usman
We report an atomistic model established for electronic structure calculations of GaBiAs (0 < Bi < 12%) alloys based on empirical tight binding parameters. Alloy supercells consisting of 1000 and 8000 atoms are relaxed using valence force field (VFF) method, including anharmonic corrections to the …
Why quantum dot simulation domain must contain multi-million atoms?
04 Jan 2013 | Online Presentations | Contributor(s): Muhammad Usman
The InGaAs quantum dots obtained from the self-assembly growth process are heavily strained. The long-range strain and piezoelectric fields significantly modifies the electronic structure of the quantum dots. This imposes a critical constraint on the minimum size of the simulation domain to study …