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TE/TM polarisation response of InAs/GaAs quantum dot bilayers
22 Oct 2015 | Presentation Materials | Contributor(s): Muhammad Usman
Quantum dot bilayers are strong candidates for the design of telecom devices working at 1300 nm wavelength range. Here we analyse - both experimentally and theoretically - their optical and polarisation properties.
Bismide Semiconductors: Revolutionising Telecom Lasers
19 Oct 2015 | Papers | Contributor(s): Muhammad Usman, Christopher A Broderick, Eoin P O\'reilly
Today’s telecomm lasers are plagued with Auger-related losses, which significantly reduce their efficiency and make device cooling essential. We are proposing a radical change in the laser technology by developing a new class of materials, bismide semiconductors. These novel nanomaterials can efficiently suppress the Auger-related loss mechanisms and therefore can lead to the realization of highly efficient and temperature stable GaAs-based photonic devices operating at telecomm and...
Electronic Structure Theory of Dilute Impurity Alloys: GaBiP and GaBiAs
18 Jan 2013 | Online Presentations | Contributor(s): M. Usman
Why quantum dot simulation domain must contain multi-million atoms?
11 Jan 2013 | Online Presentations | Contributor(s): Muhammad Usman
Excited State Spectroscopy of a Quantum Dot Molecule
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