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Multi-Scale Modeling of Self-Heating Effects in Nano-Devices
21 Apr 2016 | Online Presentations | Contributor(s): Suleman Sami Qazi, Akash Anil Laturia, Robin Louis Daugherty, Katerina Raleva, Dragica Vasileska
IWCE 2015 presentation. This paper discusses a multi-scale device modeling scheme for analyzing self-heating effects in nanoscale silicon devices. A 2D/3D particle-based device simulator is self-consistently coupled to an energy balance solver for the acoustic and optical phonon bath. This...
A Multi-Scale Modeling Approach to Study Transport in Silicon Heterojunction Solar Cells
03 Nov 2015 | Online Presentations | Contributor(s): Pradyumna Muralidharan, Dragica Vasileska, Stephen M. Goodnick, Stuart Bowden
IWCE 2015 presentation. Abstract and more information to be added at a later date.
Diffusion-Reaction Modeling of Cu Migration in CdTe Solar Devices
22 Apr 2016 | Online Presentations | Contributor(s): Da GUO, Tian Fang, Richard Akis, Dragica Vasileska
IWCE 2015 presentation. In this work, we report on development of one-dimensional (1D) finite-difference and two- dimensional (2D) finite-element diffusion-reaction simulators to investigate mechanisms behind Cu- related metastabilities observed in CdTe solar cells . The evolution of CdTe...
nanoHUB Used in Research: A One Developer/User View
18 Feb 2016 | Online Presentations | Contributor(s): Dragica Vasileska
In this presentation I will give overview of selected nanoHUB tools and their potential for performing state- of-the-art research. The tools selected for this purpose include SCHRED, QuaMC2D, and OMEN nanowire/ NEMO5. ...
Application of the nanoHUB tools in the Classroom
28 Jul 2011 | Online Presentations | Contributor(s): Dragica Vasileska
This online presentation describes the application of the nanoHUB tools in the classroom.
Research Within Vasileska Group
29 Jun 2010 | Online Presentations | Contributor(s): Dragica Vasileska
This presentation outlines recent progress in reseach within Vasileska group in the area of random telegraph noise and thermal modeling, and modeling of GaN HEMTs.
Nanoelectronic Modeling Lecture 14: Open 1D Systems - Formation of Bandstructure
27 Jan 2010 | Online Presentations | Contributor(s): Gerhard Klimeck, Dragica Vasileska
The infinite periodic structure Kroenig Penney model is often used to introduce students to the concept of bandstructure formation. It is analytically solvable for linear potentials and shows critical elements of bandstructure formation such as core bands and different effective masses in...
Nanoelectronic Modeling Lecture 12: Open 1D Systems - Transmission through Double Barrier Structures - Resonant Tunneling
This presentation shows that double barrier structures can show unity transmission for energies BELOW the barrier height, resulting in resonant tunneling. The resonance can be associated with a quasi bound state, and the bound state can be related to a simple particle in a box calculation.
Nanoelectronic Modeling Lecture 11: Open 1D Systems - The Transfer Matrix Method
31 Dec 2009 | Online Presentations | Contributor(s): Gerhard Klimeck, Dragica Vasileska, Samarth Agarwal, Parijat Sengupta
The transfer matrix approach is analytically exact, and “arbitrary” heterostructures can apparently be handled through the discretization of potential changes. The approach appears to be quite appealing. However, the approach is inherently unstable for realistically extended devices which...
Nanoelectronic Modeling Lecture 10: Open 1D Systems - Transmission through & over 1 Barrier
31 Dec 2009 | Online Presentations | Contributor(s): Gerhard Klimeck, Dragica Vasileska, Samarth Agarwal
Tunneling and interference are critical in the understanding of quantum mechanical systems. The 1D time independent Schrödinger equation can be easily solved analytically in a scattering matrix approach for a system of a single potential barrier. The solution is obtained by matching wavefunction...
Nanoelectronic Modeling Lecture 09: Open 1D Systems - Reflection at and Transmission over 1 Step
25 Jan 2010 | Online Presentations | Contributor(s): Gerhard Klimeck, Dragica Vasileska, Samarth Agarwal
One of the most elemental quantum mechanical transport problems is the solution of the time independent Schrödinger equation in a one-dimensional system where one of the two half spaces has a higher potential energy than the other. The analytical solution is readily obtained using a scattering...
Nanoelectronic Modeling Lecture 02: (NEMO) Motivation and Background
25 Jan 2010 | Online Presentations | Contributor(s): Gerhard Klimeck, Dragica Vasileska
Fundamental device modeling on the nanometer scale must include effect of open systems, high bias, and an atomistic basis. The non-equilibrium Green Function Formalism (NEGF) can include all these components in a fundamentally sound approach and has been the basis for a few novel device...
Quantum and Thermal Effects in Nanoscale Devices
4.5 out of 5 stars
18 Sep 2008 | Online Presentations | Contributor(s): Dragica Vasileska
To investigate lattice heating within a Monte Carlo device simulation framework, we simultaneously solve the Boltzmann transport equation for the electrons, the 2D Poisson equation to get the self-consistent fields and the hydrodynamic equations for acoustic and optical phonons. The phonon...
Nanotechnology: Yesterday, Today and Tomorrow
0.0 out of 5 stars
01 Sep 2008 | Online Presentations | Contributor(s): Dragica Vasileska
This presentation illustrates the development of nanotechnology from the birth of the transistor up to today and it also speculates what is going to happen in the future.
Is dual gate device structure better from a thermal perspective?
5.0 out of 5 stars
01 Sep 2008 | Online Presentations | Contributor(s): Dragica Vasileska, Stephen M. Goodnick
This presentation illustrates several points. First, it is shown that in nanoscale devices there is less degradation due to heating effects due to non-stationary nature of the carrier transport (velocity overshoot) in the device, which, in turn, makes less probable the interaction with phonons....
MOS Capacitors: Theory and Modeling
18 Jul 2008 | Online Presentations | Contributor(s): Dragica Vasileska
These slides can help users acquire a basic understanding of Metal-Oxide-Semiconductor (MOS) capacitors.
MOSFET Operation Description
This set of slides gives the students basic understanding of MOSFET operation description.www.eas.asu.edu/~vasileskNSF Career
BJT Operation Description
This set of powerpoint slides is ment for undergraduate and first year graduate students and describe the basic principles of operation of Bipolar Junction Transistor.www.eas.asu.edu/~vasileskNSF Career
Examples for QuaMC 2D particle-based device Simulator Tool
10 May 2008 | Online Presentations | Contributor(s): Dragica Vasileska, Shaikh S. Ahmed, Gerhard Klimeck
We provide three examples that demonstrate the full capabilities of QuaMC 2D for alternative device technologies.
Why QuaMC 2D and Particle-Based Device Simulators?
02 May 2008 | Online Presentations | Contributor(s): Dragica Vasileska, Shaikh S. Ahmed, Gerhard Klimeck
We describe the need for particle-based device simulators when modeling nanoscale devices.
Particle-Based Device Simulators Description
28 Apr 2008 | Online Presentations | Contributor(s): Dragica Vasileska, Shaikh S. Ahmed, Gerhard Klimeck
In this presentation we give an overview of partcle-based device simulations with focus on implementation details.
Ensemble Monte Carlo Method Described
27 Apr 2008 | Online Presentations | Contributor(s): Dragica Vasileska, Gerhard Klimeck, Mark Lundstrom, David K. Ferry
In this presentation we give an overview of the implementation details of the Ensemble Monte Carlo method for mobility and drift velocity calculation in arbitrary materials and arbitrary crystalographic orientations.NSF-Career, ONR
Modeling Coulomb Effects in Nanoscale Devices
26 Apr 2008 | Online Presentations | Contributor(s): Dragica Vasileska, Shaikh S. Ahmed, David K. Ferry
We describe the development of the modeling efforts focused towards proper description of the threshold voltage fluctuations due to the discrete impurity effects (different number and different distribution of the impurities from device to device on the same chip).NSF, ONRW. J. Gross, D....
What is CMOS Technology Facing?
3.0 out of 5 stars
07 Jul 2006 | Online Presentations | Contributor(s): Dragica Vasileska
Introduction of Quantum-Mechanical Effects in Device Simulation
MOS Capacitors: Description and Semiclassical Simulation With PADRE
26 Jun 2006 | Online Presentations | Contributor(s): Dragica Vasileska