Chapter 1: A Primer on the MOSFet Simulator on nanoHUB.org
19 Mar 2020 | Papers | Contributor(s): Abdussamad Ahmed Muntahi, Dragica Vasileska, Shaikh S. Ahmed
The MOSFet simulator on nanoHUB.org (http://nanohub.org/resources/mosfet) simulates the equilibrium electrostatics and non-equilibrium current-voltage (I-V) characteristics of i) bulk, ii) dual-gate, and iii) SOI based field effect transistors. In this chapter, we will describe: i) the structure...
Monte Carlo Method and Its Applications
29 Jan 2011 | Papers | Contributor(s): Dragica Vasileska
This book chapter describes the solution of the Boltzmann transport equation via the MC method and it also presents its application of various types of devices simulations.
Quantum and Coulomb Effects in Nanodevices
This book chapter presents ways of incorporating quantum mechanical size-quantization and tunneling effects as well as short-range Coulomb interactions within a particle-based device simulation scheme.
Consistent Parameter Set for an Ensemble Monte Carlo Simulation of 4H-SiC
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01 Jul 2008 | Papers | Contributor(s): Dragica Vasileska
A consistent parameter set is presented for Ensemble Monte Carlo simulation that simultaneously reproduces the experimental low-field and high-field characteristic transport parameters of 4H SiC.D. Vasileska and S. M. Goodnick, Computational Electronics, Morgan and Claypool, 2006.Freescale...