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Electron-Electron Interactions

20 Jun 2011 | Contributor(s): Dragica Vasileska

This set of slides describes the electron-electron interactions scattering rates calculations as it occurs in bulk materials, low-dimensional structures and semiconductor devices.

Optimize Solar Cells

10 Feb 2011 | Contributor(s): Dragica Vasileska

In this presentation different avenues used to enhance the performance of solar cells are explained.

Modeling of Light Emitting Diodes with SILVACO

07 Feb 2011 | Contributor(s): Dragica Vasileska

Simulation of LEDs with SILVACO is presented.

SILVACO Simulation of Solar Cells

This set of lecture notes describes the SILVACO simulation of Solar Cells. In particular, emphasis is placed on the module LUMINOUS.

Acoustic Phonon Scattering Explained

05 Feb 2011 | Contributor(s): Dragica Vasileska

In this lecture notes we derive and explain acoustic deformation potential scattering as it applies to transport calculations in covalent semiconductors.

Solution of the Boltzmann Equation under low-field conditions

In this presentation it is explained clearly when one can use the relaxation approximation and when one needs to use Rode's iterative method to calculate the low-field mobility in semiconductors. At the end examples are given of the effective and Hall mobilities which, as can be seen from the...

Boltzmann Transport Equation and Scattering Theory

01 Feb 2011 | Teaching Materials | Contributor(s): Dragica Vasileska

In this presentation we give simple derivation of the Boltzmann transport equation, describe the derivation of Fermi's Golden Rule, and present the derivation of most common scattering mechanisms in semiconductors.

MOSFET Lab - Scaling

03 Jan 2011 | Teaching Materials | Contributor(s): Saumitra Raj Mehrotra, Gerhard Klimeck, Dragica Vasileska

The concept of device scaling and the need to control short channel effects is used in this real life problem

ABACUS: Test for MOSFET Tool

18 Oct 2010 | Teaching Materials | Contributor(s): Saumitra Raj Mehrotra, Dragica Vasileska, Gerhard Klimeck

The objective of this test is to give an idea to a self-learning students or to instructors in the case this test is used in a classroom the level of understanding of this topic when students have gone through the learning material, worked exercises and have completed the assignments and the...

Verification of the Validity of the MOSFET Tool

11 Oct 2010 | Teaching Materials | Contributor(s): Saumitra Raj Mehrotra, Dragica Vasileska, Gerhard Klimeck

Output characteristics of a bulk MOSFET are computed using MOSFET lab and compared with an analytical model based on Bulk-Charge theory. Parasitic resistance is used as a fitting parameter in the analytical model. MATLAB script used for verification is also available for download.

ABACUS: Test for BJT lab Tool

06 Oct 2010 | Teaching Materials | Contributor(s): Saumitra Raj Mehrotra, Dragica Vasileska, Gerhard Klimeck

The objective of this test is to give an idea to a self-learning student or to instructors in the case this test is used in a classroom the level of understanding of this topic when students have gone through the learning material, worked exercises and have completed the assignments and the...

Verification of the Validity of the BJT Tool

24 Aug 2010 | Teaching Materials | Contributor(s): Saumitra Raj Mehrotra, Dragica Vasileska, Gerhard Klimeck

A pnp BJT in Common-Base configuration is analyzed both analytically and numerically using BJT Lab. DC current gain and Output characteristics are computed.MATLAB script used is also available for download.

MOSCAP Worked out problems (Basic)

19 Aug 2010 | Teaching Materials | Contributor(s): Saumitra Raj Mehrotra, Dragica Vasileska, Gerhard Klimeck

A simple MOSCAP is analyzed under different operation modes namely: Accumulation, near threshold and Inversion.

Drift Diffusion Lab Worked out problems (Drift)

18 Aug 2010 | Teaching Materials | Contributor(s): Saumitra Raj Mehrotra, Dragica Vasileska, Gerhard Klimeck

This sample worked out problem illustrated the concept of mobility. Mobility values are computed for different material and doping levels.

Drift Diffusion Lab Worked out problems (Diffusion)

16 Aug 2010 | Teaching Materials | Contributor(s): Saumitra Raj Mehrotra, Dragica Vasileska, Gerhard Klimeck

A sample problem is worked out using Drift-Diffusion lab. The problem statement deals with the concept of diffusion in semiconductors.

Worked Examples for Carrier Statistics (advanced)

Two worked out examples based on Fermi-Dirac Vs Maxwell-Boltzmann statistics and temperature effects are presented.

ABACUS: Test for MOSCAP Tool

Worked Examples for Carrier Statistics (basic)

Several worked out examples are presented that illustrate the basic concept of carrier concentration in semiconductors.

Drift Diffusion - Temperature Sensor

The fact that mobility of a semiconductor varies with temperature is used to design a temperature sensor in this test.

ABACUS: Test for Drift Diffusion Lab

12 Aug 2010 | Teaching Materials | Contributor(s): Saumitra Raj Mehrotra, Dragica Vasileska, Gerhard Klimeck

Verification of the Validity of the Drift-Diffusion Lab Tool

11 Aug 2010 | Teaching Materials | Contributor(s): Saumitra Raj Mehrotra, Dragica Vasileska, Gerhard Klimeck

Drift-Diffusion Lab results are verified analytically. In the first test minority carrier concentration is computed in a semiconductor slab with constant carrier Generation rate (/cm3.s). In the second test bias is applied across a semiconductor slab and current is computed both analytically and...

Verification of the Validity of the MOSCap Tool

Numerical results for Surface Potential Vs Gate Bias are compared with analytical results to prove the validity of MOSCap Lab.

Carrier Statistics - Temperature Effects

10 Aug 2010 | Teaching Materials | Contributor(s): Saumitra Raj Mehrotra, Dragica Vasileska, Gerhard Klimeck

Silicon (Si), Germanium (Ge) and Gallium-Arsenide (GaAs) are commonly used materials for MOS Field Effect Transistor (MOSFET) fabrication. MOSFET structures are commonly doped to achieve the desired switching operation and doping is a critical parameter in MOSFET designing.The goal in this test...

ABACUS: Test for Carrier Statistics Tool

ABACUS: Test for Bandstructure Lab

10 Aug 2010 | Teaching Materials | Contributor(s): Dragica Vasileska, Gerhard Klimeck

This is a test that examines ones understanding of electronic structure once he/she has gone through the materials and exercises provided on the nanoHUB as part of the ABACUS Bandstructure topic page and running the Bandstructure Lab.