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Bulk Monte Carlo: Implementation Details and Source Codes Download

01 Jun 2010 | Contributor(s): Dragica Vasileska, Stephen M. Goodnick

The Ensemble Monte Carlo technique has been used now for over 30 years as a numerical method to simulate nonequilibrium transport in semiconductor materials and devices, and has been the subject of numerous books and reviews. In application to transport problems, a random walk is generated to...

Bound States and Open Systems

01 Jun 2010 | Contributor(s): Dragica Vasileska

bound states, open systems, transfer matrix approach, gate leakage calculation in Schottky gates

Basics of Quantum Mechanics

Classical vs. Quantum physics, particle-wave duality, postulates of quantum mechanics

Numerical solution of the Drift-Diffusion Equations for a diode

This material describes the implementation and also gives the source code for the numerical solution of the Drift-Diffusion equations for a PN Diode. The code can be easily generalized for any 2D or 3D device.

Worked Examples for a PN Diode

01 Jun 2010 | Contributor(s): Dragica Vasileska, Gerhard Klimeck

several worked examples are presented that illustrate the operation of a PN diode.

Physical and Analytical Description of the Operation of a PN Diode

A detailed physical and analytical description of the operation of PN diodes is given.vasileska.faculty.asu.eduNSF

Drift-Diffusion Modeling and Numerical Implementation Details

This tutorial describes the constitutive equations for the drift-diffusion model and implementation details such as discretization and numerical solution of the algebraic equations that result from the finite difference discretization of the Poisson and the continuity...

Band Structure Calculation: General Considerations

17 May 2010 | Contributor(s): Dragica Vasileska

This set of slides explains to the users the concept of valence vs. core electrons, the implications of the adiabatic approximation on the separation of the total Hamiltonian of the system and the mean-field approximation used in ab initio bandstructure approaches. It then gives systematic...

Renewable Energy Sources

This presentation in pictures describes possibilities and utilization of alternative (green) sources of energy. Many sources contributed in the creation of this presentation.vasileska.faculty.asu.eduNSF

Empirical Pseudopotential Method: Theory and Implementation

This tutorial first teaches the users the basic theory behind the Empirical Pseudopotential (EPM)Bandstructure Calculation method. Next, the implementation details of the method are described and finally a MATLAB implementation of the EPM is provided.vasileska.faculty.asu.eduNSF

Tutorial for PADRE Based Simulation Tools

10 Aug 2009 | Contributor(s): Dragica Vasileska, Gerhard Klimeck

This tutorial is intended for first time and medium level users of PADRE-based simulation modules installed on the nanohub. It gives clear overview on the capabilities of each tool with emphasis to most important effects occuring in nano-scale devices.

From Semi-Classical to Quantum Transport Modeling: Quantum Transport - Recursive Green's function method, CBR approach and Atomistic

10 Aug 2009 | Contributor(s): Dragica Vasileska

This set of powerpoint slides series provides insight on what are the tools available for modeling devices that behave either classically or quantum-mechanically. An in-depth description is provided to the approaches with emphasis on the advantages and disadvantages of each approach. Conclusions...

From Semi-Classical to Quantum Transport Modeling: Quantum Transport - Usuki Method and Theoretical Description of Green's Functions

From Semi-Classical to Quantum Transport Modeling: Quantum Corrections to Semiclassical Approaches

From Semi-Classical to Quantum Transport Modeling: Particle-Based Device Simulations

From Semi-Classical to Quantum Transport Modeling: Drift-Diffusion and Hydrodynamic Modeling

From Semi-Classical to Quantum Transport Modeling: What is Computational Electronics?

Self-Heating Effects in Nano-Scale Devices. What do we know so far ...

10 Aug 2009 | Teaching Materials | Contributor(s): Dragica Vasileska, Stephen M. Goodnick

This presentation contains the research findings related to self-heating effects in nano-scale devices in silicon on insulator devices obtained at Arizona State University. Different device technologies and different device geometries are being examined. Details of the theoretical model used in...

Exercise for MESFET: Simulation Exercise

03 Aug 2009 | Teaching Materials | Contributor(s): Dragica Vasileska, Gerhard Klimeck

This simulation exercise is designed to illustrate the operation of a MESFET device for different doping of the active region.

Exercise for MESFET: Theoretical Exercises

These theoretical exercises should help the student in understanding the operation of a MESFET device.

Exercise for MOSFET Lab: DIBL Effect

In this exercise students are required to examine the drain induced barrier lowering (DIBL) effect in short channel MOSFET devices.

Exercise for MOSFET Lab: Long Channel vs. Short Channel Device

03 Aug 2009 | Teaching Materials | Contributor(s): Dragica Vasileska

In this exercise studentsare required to simulate long channel device for which the graduate channel approximation is valid and the short channel device for which velocity saturation effect starts to play significant role.

Exercise for MOS Capacitors: CV curves and interface and Oxide Charges

This exercise is designed to teach the students how the CV curves of an ideal MOS Capacitor change in the presence of oxide or interface charges.

MOSCAP: Theoretical Exercise - High Frequency CV Curves

07 Jul 2009 | Teaching Materials | Contributor(s): Dragica Vasileska

One is required to sketch the high frequency CV curves for different MOS Capacitors configurations.

BJT Lab: h-Parameters Calculation Exercise

07 Jul 2009 | Teaching Materials | Contributor(s): Dragica Vasileska, Gerhard Klimeck

In this exercise students are required to obtain the appropriate input and output parameters to extract the small signal h-parameters in common-base configuration. Afterwards they need to derive the h-parameters in common-emitter configuration in terms of the h-parameters in the common base...