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Introductory Concepts for Understanding Semiconductor Device Operation

30 Jun 2009 | Contributor(s): Dragica Vasileska

This set of lecture notes introduces the students to basic concepts needed for understanding semiconductor device operation.

PCPBT: Problem Assignment for Asymmetric Barriers

24 Jun 2009 | Contributor(s): Dragica Vasileska, Gerhard Klimeck

This example demonstrates to the students that for non-symmetric barriers which arise due to the imperfection of the molecular beam epitaxy process there is a reduction in the transmission coefficient and therefore current.

BJT Lab: Theoretical Exercises

These two theoretical exercises are designed for the purpose of teaching the students the contribution of different current components for various modes of BJT transistor operation and also to understand how to examine and extract important BJT parameters from the device output characteristics.

PN Junction Lab Exercise: Short vs. Long Diode

24 Jun 2009 | Teaching Materials | Contributor(s): Dragica Vasileska, Gerhard Klimeck

This exercise examines the behavior of short vs. long diodes.

PN Junction Lab Exercise: Non-Idealities in a PN Diode

This exercise explores the behavior of a non-ideal diode in which the generation-recombination mechanisms in the depletion region, high levels of injection, and series resistance effects can significantly affect the diode behavior.

PCPBT Exercise - Symmetric Barriers

23 Jun 2009 | Teaching Materials | Contributor(s): Dragica Vasileska, Gerhard Klimeck

This exercise explores the nature of the quasi-bound states in a symmetric double barrier structure and how the broadening and the position of the quasi-bound states varies with the hidth and the height of the barriers.

Theory of PN Diodes

23 Jun 2009 | Teaching Materials | Contributor(s): Dragica Vasileska

This set of slides is intended to explain the operation of a PN diode to students.

Homework Assignment for Bulk Monte Carlo Lab: Temperature Dependence of the Low Field Mobility for [100] Orientation

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21 Aug 2008 | Teaching Materials | Contributor(s): Dragica Vasileska, Gerhard Klimeck

User needs to calculate and compare with experiments the temperature dependence of the low-field electron mobility in Si.

Homework Assignment for Bulk Monte Carlo Lab: Velocity vs. Field for Arbitrary Crystallographic Orientations

User needs to calculate and compare to experiment the velocity field characteristics for electrons in Si for different crystalographic directions and 77K and 300K temperatures.

Cosine Bands: an Exercise for PCPBT

21 Aug 2008 | Teaching Materials | Contributor(s): Gerhard Klimeck, Dragica Vasileska

This exercise demonstrates the formation of cosine bands as we increase the number of wells in the n-well structure.

Bulk Monte Carlo Lab:Scattering Rates for Parabolic vs. Non-Parabolic Bands: an Exercise

20 Aug 2008 | Teaching Materials | Contributor(s): Dragica Vasileska, Gerhard Klimeck

This exercise helps the students learn the importance of the non-parabolic band approximation for large carrier energies.

Homework Assignment for Bulk Monte Carlo Lab: Arbitrary Crystallographic Direction

This exercise teaches the users how the average carrier velocity, average carrier energy and vally occupation change with the application of the electric field in arbitrary crystalographic direction

Parallel Conduction Channel: an Exercise for 1D Heterostructure Lab

15 Aug 2008 | Teaching Materials | Contributor(s): Dragica Vasileska, Gerhard Klimeck

This exercise uses the 1-D Heterostructure Lab, which demonstrates that adding more dopants in the buffer layer becomes ineffective after certain critical doping density. Beyond this critical doping density, additional dopants practically fill in the parallel conduction channel that sits in the...

Uniform versus delta doping in 1D heterostructures: an Exercise

This exercise is designed to demonstrate that delta doping leads to larger sheet electron density in the channel and it also allows for better control of the charge density in the channel region of High Electron Mobility Transistors (HEMTs).

Bulk Band Structure: a Simulation Exercise

03 Aug 2008 | Teaching Materials | Contributor(s): Dragica Vasileska, Gerhard Klimeck

This simulation exercise teaches the students about band structure of indirect and direct bandgap materials, the optical gaps, the concept of the effective mass and the influence of spin-orbit coupling on the valence bandstructure.NSF

BJT - Simulation Exercise

This simulation exercise teaches the students the operation of BJT transistor, what is current gain and how one extracts current gain from the Gummel plot. It also provides output device characteristics from which students have to extract the Early voltage. Furthermore, it makes the students...

Hall Effect - Theoretical Exercise

www.eas.asu.edu/~vasileskNSF

MESFET - Theoretical Exercise

BJT - Theoretical Exercise

MOSFET - Theoretical Exercises

MOSCAP - Theoretical Exercises 3

02 Aug 2008 | Teaching Materials | Contributor(s): Dragica Vasileska, Gerhard Klimeck

MOSCAP - Theoretical Exercises 2

MOSCAP - Theoretical Exercises 1

Schottky diode - Theoretical exercises

Conductivity - Theoretical Exercise