
ACUTE Exercise: 2D Scattering Rates
20 Jul 2010  Teaching Materials  Contributor(s): Dragica Vasileska
The objective of this exercise is to calculate 2D scattering rate for polar optical phonon scattering.

ACUTE Exercise: Scattering Rates
20 Jul 2010  Teaching Materials  Contributor(s): Dragica Vasileska
The objective of this exercise is to examine first the nonelasticity of the acoustic phonon scattering. Then nonparabolicity of intervalley scattering is revisited and finally alloy disorder scattering has to be derived.

ACUTE: Hydrodynamic Modeling
23 Jul 2010  Teaching Materials  Contributor(s): Dragica Vasileska
This set of slides clearly explains when and where Hydrodynamic models can be used and what are their limitations.

Alloy Disorder Scattering
11 Jul 2011  Teaching Materials  Contributor(s): Dragica Vasileska
This set of slides describes Alloy disorder scattering.

Analytical and Numerical Solution of the Double Barrier Problem
28 Jun 2010  Teaching Materials  Contributor(s): Gerhard Klimeck, Parijat Sengupta, Dragica Vasileska
Tunneling is fully quantummechanical effect that does not have classical analog. Tunneling has revolutionized surface science by its utilization in scanning tunneling microscopes. In some device applications tunneling is required for the operation of the device (Resonant tunneling diodes, EEPROMs – floating gate memories), but in some cases it leads to unwanted power dissipation, such as gate leakage in both MOS and Schottky transistors. Resonant tunneling diodes, due to the tunneling …

AQME Exercise: Bound States – Theoretical Exercise
20 Jul 2010  Teaching Materials  Contributor(s): Dragica Vasileska, Gerhard Klimeck
The objective of this exercise is to teach the students the theory behind bound states in a quantum well.

AQME: SCHRED Assignment – Quantum Confinement
13 Jul 2011  Teaching Materials  Contributor(s): Dragica Vasileska, Gerhard Klimeck
This assignment teaches the students about quantum confinement in MOS capacitors.

Atomistic Simulations of Reliability
06 Jul 2010  Teaching Materials  Contributor(s): Dragica Vasileska
Discrete impurity effects in terms of their statistical variations in number and position in the inversion and depletion region of a MOSFET, as the gate length is aggressively scaled, have recently been researched as a major cause of reliability degradation observed in intradie and dietodie threshold voltage variation on the same chip resulting in significant variation in saturation drive (on) current and transconductance degradation –two key metrics for benchmark performance of digital …

Band Structure Calculation: General Considerations
17 May 2010  Teaching Materials  Contributor(s): Dragica Vasileska
This set of slides explains to the users the concept of valence vs. core electrons, the implications of the adiabatic approximation on the separation of the total Hamiltonian of the system and the meanfield approximation used in ab initio bandstructure approaches. It then gives systematic categorization of the ab initio and semiempirical electronic structure calculation methods. Finally it discusses the advantages and the disadvantages of the semiempirical methods (Empirical Pseudopotentials …

Band Structure Lab Exercise
28 Jun 2010  Teaching Materials  Contributor(s): Gerhard Klimeck, Parijat Sengupta, Dragica Vasileska
Investigations of the electron energy spectra of solids form one of the most active fields of research. Knowledge of band theory is essential for application to specific problems such as Gunn diodes, tunnel diodes, photodetectors etc. There are several standard methods to compute the band structure of solids and confined devices (such as wells, wires, and dots) carved out of them. We will use the Band structure lab to generate the band diagrams of several materials and devices. A full list of …

Basic operation of a PN diode  Theoretical exercise
02 Aug 2008  Teaching Materials  Contributor(s): Dragica Vasileska, Gerhard Klimeck
These exercises help the students better understand the operation of conventional, p+n and short diode.www.eas.asu.edu/~vasileskNSF

Basics of Quantum Mechanics
01 Jun 2010  Teaching Materials  Contributor(s): Dragica Vasileska
Classical vs. Quantum physics, particlewave duality, postulates of quantum mechanics

BJT  Simulation Exercise
03 Aug 2008  Teaching Materials  Contributor(s): Dragica Vasileska, Gerhard Klimeck
This simulation exercise teaches the students the operation of BJT transistor, what is current gain and how one extracts current gain from the Gummel plot. It also provides output device characteristics from which students have to extract the Early voltage. Furthermore, it makes the students explore alternative dimensions for which one can get higher current gain and higher Early voltage. Overall, it is excellent introductory exercise to basic BJT transistor operation.NSF

BJT  Theoretical Exercise
03 Aug 2008  Teaching Materials  Contributor(s): Dragica Vasileska, Gerhard Klimeck
www.eas.asu.edu/~vasileskNSF

BJT Lab: hParameters Calculation Exercise
07 Jul 2009  Teaching Materials  Contributor(s): Dragica Vasileska, Gerhard Klimeck
In this exercise students are required to obtain the appropriate input and output parameters to extract the small signal hparameters in commonbase configuration. Afterwards they need to derive the hparameters in commonemitter configuration in terms of the hparameters in the common base configuration.

BJT Lab: Theoretical Exercises
24 Jun 2009  Teaching Materials  Contributor(s): Dragica Vasileska, Gerhard Klimeck
These two theoretical exercises are designed for the purpose of teaching the students the contribution of different current components for various modes of BJT transistor operation and also to understand how to examine and extract important BJT parameters from the device output characteristics.

BJT Problems and PADRE Exercise
11 Jul 2008  Teaching Materials  Contributor(s): Dragica Vasileska, Gerhard Klimeck
This set of problems makes the students familiar with hparameters and they also teach them how to write the input deck for simulation of BJT device to obtain the Gummel plot, the output characteristics and to extract the hparameters. Also here, students are taught how to treat current contacts (such as the base contact in BJT).
www.eas.asu.edu/~vasileskNSF

Boltzmann Transport Equation and Scattering Theory
01 Feb 2011  Teaching Materials  Contributor(s): Dragica Vasileska
In this presentation we give simple derivation of the Boltzmann transport equation, describe the derivation of Fermi's Golden Rule, and present the derivation of most common scattering mechanisms in semiconductors.

Bound States and Open Systems
01 Jun 2010  Teaching Materials  Contributor(s): Dragica Vasileska
bound states, open systems, transfer matrix approach, gate leakage calculation in Schottky gates

Bound States Calculation Description
05 Jul 2008  Teaching Materials  Contributor(s): Dragica Vasileska
These lectures describe the calculation of the bound states in an infinite potential well, finite potential well and triangular well approximation. At the end, shooting method, that is used to numerically solve the 1D Schrodinger equation, is briefly described.visit www.eas.asu.edu/~vasileskNSF

Bound States Calculation: an Exercise
06 Jul 2008  Teaching Materials  Contributor(s): Dragica Vasileska, Gerhard Klimeck
The problems in this exercise use the Bound States Calculation Lab to calculate bound states in an infinite square well, finite square well and triangular potential. Students also have to compare simulated values with analytical results.
Dragica Vasileska: Lecture notes on Quantum Mechanics (www.eas.asu.edu/~vasilesk)
NSF

Bulk Band Structure: a Simulation Exercise
03 Aug 2008  Teaching Materials  Contributor(s): Dragica Vasileska, Gerhard Klimeck
This simulation exercise teaches the students about band structure of indirect and direct bandgap materials, the optical gaps, the concept of the effective mass and the influence of spinorbit coupling on the valence bandstructure.
NSF

Bulk Monte Carlo Code Described
01 Jul 2008  Teaching Materials  Contributor(s): Dragica Vasileska
In this tutorial we give implementation details for the bulk Monte Carlo code for calculating the electron drift velocity, velocityfield characteristics and average carrier energy in bulk GaAs materials. Identical concepts with minor details apply to the development of a bulk Monte Carlo code for Si.
D. Vasileska and S.M. Goodnick, "Computational Electronics", published by Morgan & Claypool, 2006.
S. M. Goodnick and D. Vasileska, "Computational Electronics", Encyclopedia of Materials: …

Bulk Monte Carlo Lab:Scattering Rates for Parabolic vs. NonParabolic Bands: an Exercise
20 Aug 2008  Teaching Materials  Contributor(s): Dragica Vasileska, Gerhard Klimeck
This exercise helps the students learn the importance of the nonparabolic band approximation for large carrier energies.

Bulk Monte Carlo: Implementation Details and Source Codes Download
01 Jun 2010  Teaching Materials  Contributor(s): Dragica Vasileska, Stephen M. Goodnick
The Ensemble Monte Carlo technique has been used now for over 30 years as a numerical method to simulate nonequilibrium transport in semiconductor materials and devices, and has been the subject of numerous books and reviews. In application to transport problems, a random walk is generated to simulate the stochastic motion of particles subject to collision processes in some medium. This process of random walk generation may be used to evaluate integral equations and is connected to the …