1. Investigation of the Electrical Characteristics of Triple-Gate FinFETs and Silicon-Nanowire FETs

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   08 Aug 2006 | Online Presentations | Contributor(s): Monica Taba, Gerhard Klimeck

   Electrical characteristics of various Fin field-effect transistors (FinFETs) and silicon-nanowires were analyzed and compared using a modified three-dimensional self-consistent quantum-mechanical simulator in order to investigate device performance. FinFETs have been proposed to fulfill the …

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