Simulation of the Spin Field Effect Transistors: Effects of Tunneling and Spin Relaxation on its Performance
05 Apr 2010 | Online Presentations | Contributor(s): Yunfei Gao
A numerical simulation of spin-dependent quantum transport for a spin field effect transistor
(spinFET) is implemented in a widely used simulator nanoMOS. This method includes the effect of both
spin relaxation in the channel and the tunneling barrier between the source/drain and the channel....