Simulation of the Spin Field Effect Transistors: Effects of Tunneling and Spin Relaxation on its Performance

05 Apr 2010 | Online Presentations | Contributor(s): Yunfei Gao

A numerical simulation of spin-dependent quantum transport for a spin field effect transistor (spinFET) is implemented in a widely used simulator nanoMOS. This method includes the effect of both spin relaxation in the channel and the tunneling barrier between the source/drain and the channel....

Cylindrical CNT MOSFET Simulator

22 Jul 2008 | Tools | Contributor(s): Gloria Wahyu Budiman, Yunfei Gao, Xufeng Wang, Siyu Koswatta, Mark Lundstrom

Simulate 2-D electrons transport in CNTFET

PETE : Purdue Emerging Technology Evaluator

26 Jun 2007 | Tools | Contributor(s): Arijit Raychowdhury, Charles Augustine, Yunfei Gao, Mark Lundstrom, Kaushik Roy

Estimate circuit level performance and power of novel devices