ECE 695A Lecture 29R: Review Questions

08 Apr 2013 | Online Presentations | Contributor(s): Muhammad Alam

Review Questions: Mention a few differences between thick and thin oxide breakdown. Is breakdown in thick oxides contact dominated? Can I use AHI theory here? How does the Paschen’s cascade initiate? What does it mean to have a fractal dimension of 1.7 for 2D breakdown? Why does the number …

ECE 695A Lecture 29A: Appendix - Dimension of a Surface

08 Apr 2013 | Online Presentations | Contributor(s): Muhammad Alam

…

ECE 695A Lecture 28: Circuit Implications of Dielectric Breakdown

08 Apr 2013 | Online Presentations | Contributor(s): Muhammad Alam

Outline: Part 1 - Understanding Post-BD FET behavior BD position determination Hard and Soft BD in FETs Distinguishing leakage and intrinsic FET parameters shifts Part 2 - Impact of breakdown on digital circuit operation BD in ring oscillator BD in SR AM cell Timing, BD into soft …

ECE 695A Lecture 29: Circuit Implications of Dielectric Breakdown

08 Apr 2013 | Online Presentations | Contributor(s): Muhammad Alam

Outline: Introduction Spatial and temporal dynamics during breakdown Breakdown in bulk oxides: puzzle Conclusions

ECE 695A Lecture 27: Correlated TDDB in Off-State HCI

29 Mar 2013 | Online Presentations | Contributor(s): Muhammad Alam

…

ECE 695A Lecture 27R: Review Questions

29 Mar 2013 | Online Presentations | Contributor(s): Muhammad Alam

…

ECE 695A Lecture 26-1: Statistics of Soft Breakdown via Methods of Markov Chains

28 Mar 2013 | Online Presentations | Contributor(s): Muhammad Alam

Outline: Spatial vs. Temporal correlation Theory of correlated Dielectric Breakdown Excess leakage as a signature of correlated BD Conclusions

ECE 695A Lecture 26-2: Statistics of Soft Breakdown (Breakdown Position correlation)

28 Mar 2013 | Online Presentations | Contributor(s): Muhammad Alam

Outline: Position and time correlation of BD spot How to determine the position of the BD Spot Position correlation in BD spots Why is localization so weak? Conclusions

ECE 695A Lecture 26R: Review Questions

28 Mar 2013 | Online Presentations | Contributor(s): Muhammad Alam

…

ECE 695A Lecture 25R: Review Questions

27 Mar 2013 | Online Presentations | Contributor(s): Muhammad Alam

Review Questions: Explain why percolation resistance is area independent? Why is the physical origin of the distribution of percolation resistance? How would the ratio of hard and soft breakdown change with an auxiliary parallel capacitor in constant voltage stress? Explain. What is the …

ECE 695A Lecture 24: Statistics of Oxide Breakdown - Cell percolation model

21 Mar 2013 | Online Presentations | Contributor(s): Muhammad Alam

Outline: Observations: Failure times are statistically distributed Models of Failure Distribution: Extrinsic vs. percolation Percolation theory of multiple Breakdown TDDB lifetime projection Conclusions

ECE 695A Lecture 24R: Review Questions

21 Mar 2013 | Online Presentations | Contributor(s): Muhammad Alam

…

ECE 695A Lecture 25: Theory of Soft and Hard Breakdown

21 Mar 2013 | Online Presentations | Contributor(s): Muhammad Alam

Outline: Oxide breakdowns need not be catastrophic Observations about soft vs. hard breakdown A simple model for soft/hard breakdown Interpretation of experiments Conclusions

ECE 695A Lecture 23R: Review Questions

19 Mar 2013 | Online Presentations | Contributor(s): Muhammad Alam

…

ECE 695A Lecture 22R: Review Questions

19 Mar 2013 | Online Presentations | Contributor(s): Muhammad Alam

…

ECE 695A Lecture 23: Characterization of Defects Responsible for TDDB

19 Mar 2013 | Online Presentations | Contributor(s): Muhammad Alam

…

ECE 695A Lecture 21R: Review Questions

12 Mar 2013 | Online Presentations | Contributor(s): Muhammad Alam

Review Questions: What is the name of the failure distribution that we expect for thin oxides? For thin oxides, is PMOS or NMOS more of a concern in modern transistors? What is DBIE? When does it occur? Can the transistor be still functional ? In what ways is TDDB compare with NBTI and HCI …

ECE 695A Lecture 21: Introduction to Dielectric Breakdown

05 Mar 2013 | Online Presentations | Contributor(s): Muhammad Alam

Outline: Basic features of gate dielectric breakdown Physical characterization of breakdown spot Time-dependent defect generation Conclusions

ECE 695A Lecture 22: Voltage Dependence of Thin Dielectric Breakdown

05 Mar 2013 | Online Presentations | Contributor(s): Muhammad Alam

…

ECE 695A Lecture 19R: Review Questions

04 Mar 2013 | Online Presentations | Contributor(s): Muhammad Alam

Review Questions:: If a signal disappears from ESR because of negative-U configuration, can it be detected by SDR or EDSR methods? What is the relationship between Gauss and Tesla as units of magnetic field? Was the original SDR method for bulk or interface traps? What is the relationship …

ECE 695A Lecture 19: Spin-Dependent Recombination and Electrically Detected Magnetic Resonance

01 Mar 2013 | Online Presentations | Contributor(s): Muhammad Alam

Outline: Importance of measuring interface damage Electronic Spin Resonance ( A quick review) Spin Dependent Recombination Electrically detected spin-resonance and noise- spectroscopy Comparing the approaches Conclusions

ECE 695A Lecture 17R: Review Questions

01 Mar 2013 | Online Presentations | Contributor(s): Muhammad Alam

Review Questions: What is wrong with using C-V measurement methods exclusively for NBTI and HCI degradation? Why do people like to use C-V techniques? What method would you use for HCI measurement? HCI does not relax. Why would you still want to use on-the-fly type methods? (Hint: Think …

ECE 695A Lecture 18R: Review Questions

01 Mar 2013 | Online Presentations | Contributor(s): Muhammad Alam

Review Questions: Between DCIV and CP methods, which one is easier and why? In what ways are CP and DCIV methods better at characterizing traps compared to C-V methods? What are the problems of using CP, DCIV, C-V methods for NBTI measurements? Which method does not suffer from the same …

ECE 695A Lecture 18: DC-IV and Charge Pumping Methods

25 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam

Outline: Recall: Properties of Interface Defects Flux-based method 1: Direct Current-Voltage method Flux-based method 2: Charge pumping method Conclusions

ECE 695A Lecture 16: Review Questions

22 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam

Review Question What is the difference between hot atom dissociation vs. cold atom dissociation?. Many experiments are reported at 77K and 295K. Why these temperatures?. Why is there such a big difference between VT degradation and NIT degradation?. Impact ionization threshold is …