
2008 NCN@Purdue Summer School: Electronics from the Bottom Up
26 Aug 2008  Workshops  Contributor(s): Muhammad A. Alam, Supriyo Datta, Mark Lundstrom
Electronics from the Bottom Up is designed to promote the bottomup perspective by beginning at the nanoscale, and working up to the micro and macroscale of devices and systems. For electronic devices, this means first understanding the smallest electronic device – a single molecule with two contacts. For carrier transport, it means beginning at the nanoscale where ballistic transport, atomistic effects, and stochastic effects dominate. For MOSFETs, it means beginning with the “ultimate” MOSFET. Electronics from the Bottom Up does not mean ab initio numerical simulations – it means beginning with concepts and approaches that are both simple and sound at the nanoscale rather than extrapolated from the microscale.

2009 NCN@Purdue Summer School: Electronics from the Bottom Up
22 Sep 2009  Workshops  Contributor(s): Supriyo Datta, Mark Lundstrom, Muhammad A. Alam, Joerg Appenzeller
The school will consist of two lectures in the morning on the Nanostructured Electronic Devices: Percolation and Reliability and an afternoon lecture on Graphene Physics and Devices. A hands on laboratory session will be available in the afternoons.

A Blind Fish in a River with a Waterfall
23 Mar 2010  Tools  Contributor(s): Muhammad Alam, Sajia Sadeque
Prototype for a reliability problem defined as Stochastic Process with a Threshold

A Physical Model for NonOhmic Shunt Conduction and Metastability in Amorphous Silicon Solar Cells
16 Aug 2011  Online Presentations  Contributor(s): Sourabh Dongaonkar, Souvik Mahapatra, Karthik Yogendra, Muhammad Alam
In this talk we develop a coherent physics based understanding of the shunt leakage problem in aSi:H cells, and discuss its implications on cell and module level.
Sourabh Dongaonkar is with School of Electrical and Computer Engineering, Purdue University, West Lafayette, IN
Karthik Y and Souvik Mahapatra are with Department of Electrical Engineering, IIT Bombay, Mumbai, India
SRC ERI, Network for Photovoltaic Technology
[1] V. Sittinger, F. Ruske, W. Werner, B. Szyszka, B. Rech, J. …

A Tutorial Introduction to NegativeCapacitor Landau Transistors: Perspectives on the Road Ahead
04 Dec 2015  Online Presentations  Contributor(s): Muhammad A. Alam
In this talk, I use a simple graphical approach to demystify the device and explain why the experimental results are easy to misinterpret. Since the NCFET is just a special case of a much broader class of phasechange devices and systems (e.g., transistors, memories, MEMS, logicinmemory architecture) that operate by tailoring the Landau potential energy landscape, once NCFET is understood, the operation of all other devices becomes intuitively obvious as well. The talk will conclude with a discussion of four possible roads to improving NCFET device performance.

BioSensorLab
14 Aug 2006  Tools  Contributor(s): Pradeep R. Nair, Jonghyun Go, Graeme John Landells, Tejas Rajiv Pandit, Muhammad Alam, Xin Jin, Piyush Dak, Ankit Jain
BioSensorLab is a tool to evaluate and predict the performance parameters of Biosensors.

Computational Modeling: Experience from my Bell Lab Days
19 Dec 2007  Online Presentations  Contributor(s): Muhammad A. Alam
This presentation was one of 13 presentations in the oneday forum,
"Excellence in Computer Simulation," which brought together a broad
set of experts to reflect on the future of computational science and
engineering.

ECE 606 Lecture 10: Additional Information
16 Feb 2009  Online Presentations  Contributor(s): Muhammad A. Alam
Outline:
 Potential, field, and charge
 Ek diagram vs. banddiagram
 Basic concepts of donors and acceptors
 Conclusion
R. F. Pierret, "Advanced Semiconductor Fundamentals", Modular Series on Solid State Devices, Volume VI, AddisonWesley, 1987, Chapter 4 (pages 101111)

ECE 606 Lecture 11: Equilibrium Statistics
16 Feb 2009  Online Presentations  Contributor(s): Muhammad A. Alam
Outline:
 Law of massaction & intrinsic concentration
 Statistics of donors and acceptor levels
 Conclusion
R. F. Pierret, "Advanced Semiconductor Fundamentals", Modular Series on Solid State Devices, Volume VI, AddisonWesley, 1987, Chapter 4 (pages 110120

ECE 606 Lecture 12: Equilibrium Concentrations
16 Feb 2009  Online Presentations  Contributor(s): Muhammad A. Alam
Outline:
 Carrier concentration
 Temperature dependence of carrier concentration
 Multiple doping, codoping, and heavydoping
 Conclusion
R. F. Pierret, "Advanced Semiconductor Fundamentals", Modular Series on Solid State Devices, Volume VI, AddisonWesley, 1987, Chapter 4, (pages 118128)

ECE 606 Lecture 13: RecombinationGeneration
16 Feb 2009  Online Presentations  Contributor(s): Muhammad A. Alam
Outline:
 Nonequilibrium systems
 Recombination generation events
 Steadystate and transient response
 Derivation of RG formula
 Conclusion
R. F. Pierret, "Advanced Semiconductor Fundamentals", Modular Series on Solid State Devices, Volume VI, AddisonWesley, 1987, Chapter 5, (pages 134146)

ECE 606 Lecture 13a: Fermi Level Differences for Metals and Semiconductors
16 Feb 2009  Online Presentations  Contributor(s): Muhammad A. Alam
Short chalkboard lecture on Fermi level and band diagram differences for metals and semiconductors.

ECE 606 Lecture 14: Bulk Recombination
29 Mar 2009  Online Presentations  Contributor(s): Muhammad A. Alam
Outline:
 Derivation of SRH formula
 Application of SRH formula for special cases
 Direct and Auger recombination
 Conclusion
R. F. Pierret, "Advanced Semiconductor Fundamentals", Modular Series on Solid State Devices, Volume VI, AddisonWesley, 1987, Chapter 5 (Pages 154167)

ECE 606 Lecture 15: Surface Recombination/Generation
29 Mar 2009  Online Presentations  Contributor(s): Muhammad A. Alam
Outline:
 Nature of interface states
 SRH formula adapted to interface states
 Surface recombination in depletion region
 Conclusion
R. F. Pierret, "Advanced Semiconductor Fundamentals", Modular Series on Solid State Devices, Volume VI, AddisonWesley, 1987, Chapter 5 (Pages 154167)

ECE 606 Lecture 16: Carrier Transport
23 Feb 2009  Online Presentations  Contributor(s): Muhammad A. Alam

ECE 606 Lecture 17: Hall Effect, Diffusion
24 Feb 2009  Online Presentations  Contributor(s): Muhammad A. Alam
Outline:
 Measurement of mobility
 Hall Effect for determining carrier concentration
 Physics of diffusion
 Conclusions
R. F. Pierret, "Advanced Semiconductor Fundamentals", Modular Series on Solid State Devices, Volume VI, AddisonWesley, 1987, Chapter 5 (Pages 190202)

ECE 606 Lecture 18: Continuity Equations
24 Mar 2009  Online Presentations  Contributor(s): Muhammad A. Alam
Outline
 Continuity Equation
 Example problems
 Conclusion
R. F. Pierret, "Advanced Semiconductor Fundamentals", Modular Series on Solid State Devices, Volume VI, AddisonWesley, 1987, Chapter 5 (Pages 205‐210)

ECE 606 Lecture 19: Numerical Solution of Transport Equation
29 Mar 2009  Online Presentations  Contributor(s): Muhammad A. Alam
Outline:
 Basic Transport Equations
 Gridding and finite differences
 Discretizing equations and boundary conditions
 Conclusion
Lundstrom, Mark, A Primer on Semiconductor Device Simulation, online presentation.

ECE 606 Lecture 1: Introduction
28 Jan 2009  Online Presentations  Contributor(s): Muhammad A. Alam
Outline:
 Course information
 Current flow in semiconductors
 Types of material systems
 Classification of crystals

ECE 606 Lecture 20: Electrostatics of PN Junction Diodes
11 Mar 2009  Online Presentations  Contributor(s): Muhammad A. Alam

ECE 606 Lecture 21: PN Diode IV Characteristics
11 Mar 2009  Online Presentations  Contributor(s): Muhammad A. Alam

ECE 606 Lecture 22: Nonideal Effects
11 Mar 2009  Online Presentations  Contributor(s): Muhammad A. Alam

ECE 606 Lecture 23: AC Response
13 Mar 2009  Online Presentations  Contributor(s): Muhammad A. Alam

ECE 606 Lecture 24: Large Signal Response
13 Mar 2009  Online Presentations  Contributor(s): Muhammad A. Alam

ECE 606 Lecture 25: Schottky Diode I
24 Mar 2009  Online Presentations  Contributor(s): Muhammad A. Alam