17 Sep 2013 | Tools | Contributor(s): Kyle Conrad, Jesse Maassen, Mark Lundstrom
This tool calculates the distribution of modes, the electronic thermoelectric transport coefficients, and the lattice thermal transport properties from band structure information.
MIT Virtual-Source Tool
07 Aug 2012 | Tools | Contributor(s): Xingshu Sun, Xufeng Wang, Yubo Sun, Mark Lundstrom
Virtual Source Model for MOSFET compact modeling
FD integral calculator
13 Jun 2011 | Tools | Contributor(s): Xingshu Sun, Mark Lundstrom, raseong kim
Calculate the Fermi-Dirac integral given the fermi energy and the order of integral
14 Feb 2006 | Tools | Contributor(s): Anisur Rahman, Jing Wang, Jing Guo, Md. Sayed Hasan, Yang Liu, Akira Matsudaira, Shaikh S. Ahmed, Supriyo Datta, Mark Lundstrom
Calculate the ballistic I-V characteristics for conventional MOSFETs, Nanowire MOSFETs and Carbon NanoTube MOSFETs
Bulk Monte Carlo Lab
27 Apr 2008 | Tools | Contributor(s): Dragica Vasileska, Mark Lundstrom, Stephen M. Goodnick, Gerhard Klimeck
This tool calculates the bulk values of the carrier drift velocity and average electron energy in any material in which the conduction band is represented by a three valley model. Examples include Si, Ge and GaAs.
Cylindrical CNT MOSFET Simulator
22 Jul 2008 | Tools | Contributor(s): Gloria Wahyu Budiman, Yunfei Gao, Xufeng Wang, Siyu Koswatta, Mark Lundstrom
Simulate 2-D electrons transport in CNTFET
PETE : Purdue Emerging Technology Evaluator
26 Jun 2007 | Tools | Contributor(s): Arijit Raychowdhury, Charles Augustine, Yunfei Gao, Mark Lundstrom, Kaushik Roy
Estimate circuit level performance and power of novel devices
13 Mar 2006 | Tools | Contributor(s): Neophytos Neophytou, Shaikh S. Ahmed, Eric Polizzi, Gerhard Klimeck, Mark Lundstrom
Simulates ballistic transport properties in 3D Carbon NanoTube Field Effect Transistor (CNTFET) devices
14 Dec 2006 | Tools | Contributor(s): Gyungseon Seol, Youngki Yoon, James K Fodor, Jing Guo, Akira Matsudaira, Diego Kienle, Gengchiau Liang, Gerhard Klimeck, Mark Lundstrom, Ahmed Ibrahim Saeed
This tool simulates E-k and DOS of CNTs and graphene nanoribbons.
19 May 2006 | Tools | Contributor(s): Zhibin Ren, Sebastien Goasguen, Akira Matsudaira, Shaikh S. Ahmed, Kurtis Cantley, Yang Liu, Mark Lundstrom, Xufeng Wang
2-D simulator for thin body (less than 5 nm), fully depleted, double-gated n-MOSFETs
Band Structure Lab
19 May 2006 | Tools | Contributor(s): Samik Mukherjee, Abhijeet Paul, Neophytos Neophytou, Raseong Kim, Junzhe Geng, Michael Povolotskyi, Tillmann Christoph Kubis, Arvind Ajoy, Bozidar Novakovic, Sebastian Steiger, Michael McLennan, Mark Lundstrom, Gerhard Klimeck
Computes the electronic structure of various materials in the spatial configuration of bulk (infinitely periodic), quantum wells (confined in one dimension, infinitely periodic in 2 dimensions), and wires (confined in 2 dimensions and infinitely periodic i
30 Mar 2006 | Tools | Contributor(s): Dragica Vasileska, Shaikh S. Ahmed, Gokula Kannan, Matteo Mannino, Gerhard Klimeck, Mark Lundstrom, Akira Matsudaira, Junzhe Geng
SCHRED simulation software calculates the envelope wavefunctions and the corresponding bound-state energies in a typical MOS, SOS and a typical SOI structure.