Mobility and Resistivity Tool

15 Jun 2012 | Tools | Contributor(s): Ivan Santos, Stephanie Michelle Sanchez, Stella Quinones

Understand how doping affects mobility and resistivity.

Carrier Concentration

13 Jun 2012 | Tools | Contributor(s): Stephanie Michelle Sanchez, Ivan Santos, Stella Quinones

Calculate the carrier concentration for a semiconductor material as a function of doping and temperature.

Ohms Law

24 Apr 2012 | Tools | Contributor(s): Robert Benjamin Post, Stella Quinones

Calculate and observe the relationship between current, voltage, resistance, and power.

Minority Carrier Diffusion Equation (MCDE) Tool

26 Apr 2012 | Tools | Contributor(s): Ivan Santos, Stella Quinones

Apply the Minority Carrier Diffusion Equation (MCDE) to model excess carrier concentration as a function of time or distance.

Semiconductor Doping

11 Apr 2012 | Tools | Contributor(s): Ivan Santos, Stella Quinones

Understand N-Type and P-Type Semiconductor Doping.

Impedance Adder

28 Feb 2012 | Tools | Contributor(s): Emmanuel Jose Ochoa, Stella Quinones

Understand how to calculate the equivalent impedance of circuit elements combined in parallel and/or series, and understand equivalent impedance calculations in rectangular and polar form.

Series and Parallel

17 Feb 2012 | Tools | Contributor(s): Emmanuel Jose Ochoa, Stella Quinones

Examine the resistance, R, inductance, L, or capacitance, C, of multiple elements in series or in parallel.

Delta-Wye

17 Apr 2012 | Tools | Contributor(s): Robert Benjamin Post, Stella Quinones

Convert from Delta to Wye configuration for resistances, and vice versa.

Phasor

28 Feb 2012 | Tools | Contributor(s): Stella Quinones, Robert Benjamin Post

Visualize and understand the complex numbers represented in both rectangular and polar coordinates.

Multimeter

10 Feb 2012 | Tools | Contributor(s): Emmanuel Jose Ochoa, Stella Quinones

Understand the correct procedure for measuring voltage (V) and current (I), and observe the dependence between the interchange of the leads and the sign of the numerical reading.

Circuit Elements

17 Feb 2012 | Tools | Contributor(s): Emmanuel Jose Ochoa, Stella Quinones

Understand the dependence of resistance, R, inductance, L, and capacitance, C, on physical dimensions and material properties.

Resistor Color Code

10 Feb 2012 | Tools | Contributor(s): Robert Benjamin Post, Stella Quinones

Apply the color code to determine the resistance value of a resistor or input a resistance value and determine the color code of the resistor.

MOSFET Design Calculations - Step 3

01 Apr 2012 | Teaching Materials | Contributor(s): Jose Valdez

A series of homework assignments were created to introduce senior level undergraduate Electrical and Computer Engineering students to the design of MOSFETs by combining calculations of MOSFET related design parameters for a set of doping and oxide thickness values with the analysis of MOSFET …

MOSFET Design Simulation I

06 Mar 2012 | Teaching Materials | Contributor(s): Stella Quinones, Jose Valdez

A series of homework assignments were created to introduce senior level undergraduate Electrical and Computer Engineering students to the design of MOSFETs by combining calculations of MOSFET related design parameters for a set of doping and oxide thickness values with the analysis of MOSFET …

MOSFET Design Calculations - Step 2

03 Mar 2012 | Teaching Materials | Contributor(s): Stella Quinones, Jose Valdez

A series of homework assignments were created to introduce senior level undergraduate Electrical and Computer Engineering students to the design of MOSFETs by combining calculations of MOSFET related design parameters for a set of doping and oxide thickness values with the analysis of MOSFET …

MOS-C VFB Calculation: Comparison of Theoretical and Simulation Values

04 Feb 2012 | Teaching Materials | Contributor(s): Stella Quinones

The flatband voltage is calulated based on device physics theory and is compared to the value determined from the simulation of a MOS-Capacitor using the MOSCap simulation tool on the nanoHUB.org website. By completing this exercise, the student is able to compare the mathematical model of the gate …

MOSFET Design Calculations - Step 1

30 Dec 2010 | Teaching Materials | Contributor(s): Stella Quinones, Jose Valdez

A series of homework assignments were created to introduce senior level undergraduate Electrical and Computer Engineering students to the design of MOSFETs by combining calculations of MOSFET related design parameters for a set of doping and oxide thickness values with the analysis of MOSFET …

PN Junctions: Simulation and Calculation of Electrostatic Variables

30 Dec 2010 | Teaching Materials | Contributor(s): Stella Quinones

Homework assignment that combines basic PN junction electrostatic variable calculations (Vbi, Xn, Xp and Emax) with the simulation of PN junctions for 2 sets of doping conditions. Both forward and reverse bias conditions are simulated. This homework assignment is designed for junior level …

MOSFET Design Calculations - Step 2

31 Dec 2010 | Teaching Materials | Contributor(s): Stella Quinones, Jose Valdez

A series of homework assignments were created to introduce senior level undergraduate Electrical and Computer Engineering students to the design of MOSFETs by combining calculations of MOSFET related design parameters for a set of doping and oxide thickness values with the analysis of MOSFET …