NanoMOS 3.0: First-Time User Guide
06 Jun 2006 | Online Presentations | Contributor(s): Kurtis Cantley, Mark Lundstrom
This tutorial is an introduction to the nanoMOS simulation tool for new users. Descriptions of input and output parameters are included, along with new features associated with the Rappture interface. There are also descriptions of nine examples that are loadable in the new version to help the user understand the capabilities of the tool. These examples include semiclassical and NEGF simulations of thin-body double-gated n-MOSFETs, with local density of states and I-V characteristic outputs.
19 May 2006 | Tools | Contributor(s): Zhibin Ren, Sebastien Goasguen, Akira Matsudaira, Shaikh S. Ahmed, Kurtis Cantley, Yang Liu, Yunfei Gao, Xufeng Wang, Mark Lundstrom
2-D simulator for thin body (less than 5 nm), fully depleted, double-gated n-MOSFETs