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NanoMOS
19 May 2006 | Tools | Contributor(s): Zhibin Ren, Sebastien Goasguen, Akira Matsudaira, Shaikh S. Ahmed, Kurtis Cantley, Yang Liu, Mark Lundstrom, Xufeng Wang
2-D simulator for thin body (less than 5 nm), fully depleted, double-gated n-MOSFETs
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nanoMOS 2.0: A Two -Dimensional Simulator for Quantum Transport in Double-Gate MOSFETs
06 Oct 2006 | Publications | Contributor(s): Zhibin Ren, Ramesh Venugopal, Sebastien Goasguen, Supriyo Datta, Mark Lundstrom
A program to numerically simulate quantum transport in double gate MOSFETs is
described. The program uses a Green’s function approach and a simple treatment of
scattering based on the idea of so-called Büttiker probes. The double gate device geometry
permits an efficient mode space …
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NanoMOS 2.5 Source Code Download
22 Feb 2005 | Downloads | Contributor(s): Zhibin Ren, Sebastien Goasguen
NanoMOS is a 2-D simulator for thin body (less than 5 nm), fully depleted, double-gated n-MOSFETs. A choice of five transport models is available (drift-diffusion, classical ballistic, energy transport, quantum ballistic, and quantum diffusive). The transport models treat quantum effects in the …
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Nanoscale MOSFETs: Physics, Simulation and Design
26 Oct 2006 | Publications | Contributor(s): Zhibin Ren
This thesis discusses device physics, modeling and design issues of nanoscale
transistors at the quantum level. The principle topics addressed in this report are 1) an
implementation of appropriate physics and methodology in device modeling, 2)
development of a new TCAD (technology computer …
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Schred Source Code Download
09 Mar 2005 | Downloads | Contributor(s): Dragica Vasileska, Zhibin Ren
Schred 2.0 calculates the envelope wavefunctions and the corresponding bound-state energies in a typical MOS (Metal-Oxide-Semiconductor) or SOS (Semiconductor-Oxide- Semiconductor) structure and a typical SOI structure by solving self-consistently the one-dimensional (1D) Poisson equation and the …
