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FETToy
14 Feb 2006 | Tools | Contributor(s): Anisur Rahman, Jing Wang, Jing Guo, Md. Sayed Hasan, Yang Liu, Akira Matsudaira, Shaikh S. Ahmed, Supriyo Datta, Mark Lundstrom
Calculate the ballistic I-V characteristics for conventional MOSFETs, Nanowire MOSFETs and Carbon NanoTube MOSFETs
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A Three-Dimensional Quantum Simulation of Silicon Nanowire Transistors with the Effective-Mass Approximation
30 Oct 2006 | Publications | Contributor(s): Jing Wang, POLIZZI ERIC, Mark Lundstrom
The silicon nanowire transistor (SNWT) is a promising device structure for future
integrated circuits, and simulations will be important for understanding its device physics and
assessing its ultimate performance limits. In this work, we present a three-dimensional quantum
mechanical …
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Device Physics and Simulation of Silicon Nanowire Transistors
28 Sep 2006 | Publications | Contributor(s): Jing Wang
As the conventional silicon metal-oxide-semiconductor field-effect transistor
(MOSFET) approaches its scaling limits, many novel device structures are being
extensively explored. Among them, the silicon nanowire transistor (SNWT) has attracted
broad attention from both the semiconductor …
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Device Physics and Simulation of Silicon Nanowire Transistors
20 May 2006 | Publications | Contributor(s): Jing Wang
As the conventional silicon metal-oxide-semiconductor field-effect transistor (MOSFET) approaches its scaling limits, many novel device structures are being extensively explored. Among them, the silicon nanowire transistor (SNWT) has attracted broad attention from both the semiconductor industry …
