Simulations provide new insight into emerging nanoelectronic device
Prof. Alejandro Strachan and group members Nicolas Onofrio and David Guzman used advanced atomistic simulations to understand the operation of electro-metallization cells. These resistance switching devices are very attractive for memory and logic applications in electronics due to their ultra-fast switching speeds and possible miniaturization to the nanometer scales that could enable faster and higher capacity memory.
The simulations, detailed in a paper published in Nature Materials, provide unprecedented detail regarding the operation of these cells. "An atomic-level mechanistic understanding of the switching process provides new guidelines for materials optimization" - Explains Strachan, Professor of Materials Engineering at Purdue and Deputy Director of the Network for Computational Nanotechnology (NCN) and Purdue Center for Predictive Materials and Devices (c-PRIMED).