Support Options

Submit a Support Ticket

Home Projects Simulation of GaN based RTD


To derive the I-V characteristics of a Gallium Nitride(GaN) based resonant tunneling diode. GaN is opted as it has a wide band gap of 3.4 eV, affords it special properties for applications in optoelectronic, high-power and high-frequency devices. To study the potential profile of the given RTD and also to find the Tunneling current density at various applied potential. Basically two methods are chosen, viz. Transfer matrix method and Finite difference method. The method which provides the best characteristic is chosen according to the situation., a resource for nanoscience and nanotechnology, is supported by the National Science Foundation and other funding agencies. Any opinions, findings, and conclusions or recommendations expressed in this material are those of the author(s) and do not necessarily reflect the views of the National Science Foundation.