III-V Tunnel FET Model 1.0.1
The III-V Tunnel FET Model is a look-up table based model, where the device current and capacitance characteristics are obtained from calibrated TCAD Sentaurus simulation.
Listed in Compact Models | publication by group NEEDS: New Era Electronic Devices and Systems
Additional materials available
Version 1.0.1 - published on 21 Apr 2015 doi:10.4231/D30Z70X8D - cite this
Licensed under NEEDS Modified CMC License according to these terms
Wishlist
787 |
fix hidden-state issues for RF analysis Proposed by Geoffrey Coram @ on • |
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720 |
Convert to being charge-based model Proposed by Ken Kundert @ on • |
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694 |
Remove analysis() calls; support more than "dc" and "tran" Proposed by Geoffrey Coram @ on • |
NEEDS: New Era Electronic Devices and Systems
This publication belongs to the NEEDS: New Era Electronic Devices and Systems group.