Double-Clamped Silicon NEMS Resonators Model 1.0.0

By Yanfei Shen1, Scott Calvert1, Jeffrey F. Rhoads1, Saeed Mohammadi1

Purdue University

This model is built for a silicon-based, double-clamped (source and drain), double-gate beam. The model takes into account capacitive modulation with the two gates, piezoresistive modulation through the beam and electrical parasitic elements.

Listed in Compact Models | publication by group NEEDS: New Era Electronic Devices and Systems

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Version 1.0.0 - published on 07 Mar 2016 doi:10.4231/D37659G7N - cite this

Licensed under NEEDS Modified CMC License according to these terms

Description

Micro/Nanoelectromechanical systems (M/NEMS) are gaining great momentum and interest in a variety of
applications, such as high-sensitivity mass sensing, tunable signal filtering and precision timing. They possess
inherently high quality factors and can provide narrow bandwidth operation. This model is built for a silicon-based, double-clamped (source and drain), double-gate (back and side gate) beam. The model takes into account capacitive modulation with the two gates, piezoresistive modulation through the beam and electrical parasitic elements.

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Notes

While this model is built for a double-gate silicon beam, currently, only behaviors associated with out-of-plane vibrations induced by a back gate excitation are valid. The side gate capacitance is set to be static in the model.