UCSB Graphene Nanoribbon Interconnect Compact Model 2.0.0

By Junkai Jiang1, Kaustav Banerjee1, Wei Cao2

1. University of California, Santa Barbara 2. University of California Santa Barbara

As the (local) interconnect dimension scales down to sub-20 nm, the rapidly increasing metal resistance by barrier layer and surface and grain boundary scatterings, and the diminishing current carrying capacity by self-heating and...

Listed in Compact Models | publication by group NEEDS: Nano-Engineered Electronic Device Simulation Node

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Version 2.0.0 - published on 03 May 2017 doi:10.4231/D3NK3663N - cite this

Licensed under NEEDS Modified CMC License according to these terms

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Description

This model describes the circuit-level behavior of the (intercalation) doped GNR interconnect, and is compatible with both DC and transient SPICE simulations.

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