UCSB Graphene Nanoribbon Interconnect Compact Model 2.0.0

By Junkai Jiang1, Kaustav Banerjee1, Wei Cao2

1. University of California, Santa Barbara 2. University of California Santa Barbara

This model describes the circuit-level behavior of the (intercalation) doped GNR interconnect, and is compatible with both DC and transient SPICE simulations.

Listed in Compact Models | publication by group NEEDS: Nano-Engineered Electronic Device Simulation Node

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Version 2.0.0 - published on 03 May 2017 doi:10.4231/D3NK3663N - cite this

Licensed under NEEDS Modified CMC License according to these terms



As the (local) interconnect dimension scales down to sub-20 nm, the rapidly increasing metal resistance by barrier layer and surface and grain boundary scatterings, and the diminishing current carrying capacity by self-heating and Joule-heating, the metal (Cu) interconnect cannot meet the requirements from the circuit performance. Graphene nanoribbon interconnect is an excellent candidate for the interconnect, mainly because of its high current carrying capacity. Intercalation doped graphene nanoribbon (GNR) interconnect was first proposed by C. Xu et al. in UCSB, and was recently demonstrated to offer excellent circuit performance and energy efficiency improvements by J. Jiang et al. in UCSB, and was demonstrated with more than 100× reliability improvement w.r.t. Cu interconnects. UCSB GNR interconnect compact model describes the circuit-level behavior of the (intercalation) doped GNR interconnect. This model is based on a distributed RLC circuit, in which carrier mean free path (lD), GNR doping doping (Fermi) level (EF), number of layers (N_L), edge specularity (p) and low-k dielectric constant (eps) are considered. The model was originally published by our group. By using a simple tight-binding model and the linear response Landauer formula, the resistance of GNR is derived. Quantum contact resistance is the minimum contact resistance to the 2-dimensional system (GNR), and is considered in the model. In addition to the resistance, the capacitance (electrostatic capacitance and quantum capacitance) and inductance (magnetic inductance and kinetic inductance) are considered to satisfy the transient simulation requirements. By implementing the model in Verilog-A, our GNR interconnect model is compatible with both DC and transient SPICE simulations.

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Compared with the previous version, this version includes the edge scattering specularity (p), electrostatic capacitance, magnetic inductance, and user-defined contact resistance. In this model, user can define the doping level by the Fermi level (|E_F|), in addition to the doping concentration. This version also fixed bugs in the previous version, including the definition of doping concentration.