UCSB Graphene Nanoribbon Interconnect Compact Model 2.0.0
As the (local) interconnect dimension scales down to sub-20 nm, the rapidly increasing metal resistance by barrier layer and surface and grain boundary scatterings, and the diminishing current carrying capacity by self-heating and...
Listed in Compact Models | publication by group NEEDS: Nano-Engineered Electronic Device Simulation Node
Additional materials available
Version 2.0.0 - published on 03 May 2017 doi:10.4231/D3NK3663N - cite this
Licensed under NEEDS Modified CMC License according to these terms
Description
This model describes the circuit-level behavior of the (intercalation) doped GNR interconnect, and is compatible with both DC and transient SPICE simulations.
Model Release Components ( Show bundle contents ) Bundle
UCSB Graphene Nanoribbon Interconnect Compact Model 2.0.0 Verilog-A(VA | 11 KB)
UCSB Graphene Nanoribbon Interconnect Compact Model 2.0.0 Benchmarks(ZIP | 752 B )
UCSB Graphene Nanoribbon Interconnect Compact Model 2.0.0 Parameters(PDF | 12 KB)- UCSB Graphene Nanoribbon Interconnect Compact Model 2.0.0 Experimental Data(ZIP | 362 KB)
- UCSB Graphene Nanoribbon Interconnect Compact Model 2.0.0 Manual(PDF | 642 KB)
LICENSE.txt(TXT | 1 KB)- README.txt(TXT | 2 KB)
- License terms
Cite this work
Researchers should cite this work as follows:
- Jiang, J., Banerjee, K., Cao, W. (2017). UCSB Graphene Nanoribbon Interconnect Compact Model. (Version 2.0.0). nanoHUB. doi:10.4231/D3NK3663N
NEEDS: Nano-Engineered Electronic Device Simulation Node
This publication belongs to the NEEDS: Nano-Engineered Electronic Device Simulation Node group.