Compact Model of Dielectric Breakdown in Spin Transfer Torque Magnetic Tunnel Junction 6.0

By You Wang1, Yue Zhang2, Weisheng Zhao2, Yahya Lakys3, Dafine Ravelosona3, Jacques-Olivier Klein3, Claude Chappert3, Lirida Alves de Barros Naviner1, Hao Cai1

1. LTCI, CNRS, Télécom ParisTech, Université Paris-Saclay, 75013, Paris, France 2. 2Fert Beijing Institute, BDBC and School of Electronic and Information Engineering, Beihang Univeristy, Beijing, 100191, China 3. IEF, Univ. Paris-Sud/CNRS UMR 8622, Orsay, 91405, France

Spin Transfer Torque Magnetic Tunnel Junction (STT-MTJ) is a promising candidate for non-volatile memories thanks to its high speed, low power, infinite endurance and easy integration with CMOS circuits. However, a...

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Version 6.0 - published on 09 Jan 2017 doi:10.4231/D3TT4FV2X - cite this

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Description

This models includes the mechanism of time dependent dielectric breakdown (TDDB) in oxide barrier and the simulation results show great consistency with the experimental measurements.

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