Compact Model of Dielectric Breakdown in Spin Transfer Torque Magnetic Tunnel Junction 6.0

By You Wang1, Yue Zhang2, Weisheng Zhao2, Yahya Lakys3, Dafine Ravelosona3, Jacques-Olivier Klein3, Claude Chappert3, Lirida Alves de Barros Naviner1, Hao Cai1

1. LTCI, CNRS, Télécom ParisTech, Université Paris-Saclay, 75013, Paris, France 2. 2Fert Beijing Institute, BDBC and School of Electronic and Information Engineering, Beihang Univeristy, Beijing, 100191, China 3. IEF, Univ. Paris-Sud/CNRS UMR 8622, Orsay, 91405, France

Spin Transfer Torque Magnetic Tunnel Junction (STT-MTJ) is a promising candidate for non-volatile memories thanks to its high speed, low power, infinite endurance and easy integration with CMOS circuits. However, a...

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Version 6.0 - published on 09 Jan 2017 doi:10.4231/D3TT4FV2X - cite this Last public release: 3.0

Licensed under NEEDS Modified CMC License according to these terms


This models includes the mechanism of time dependent dielectric breakdown (TDDB) in oxide barrier and the simulation results show great consistency with the experimental measurements.

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