Compact Model of Dielectric Breakdown in Spin Transfer Torque Magnetic Tunnel Junction 1.0

By You Wang1, Yue Zhang2, Weisheng Zhao2, Yahya Lakys3, Dafine Ravelosona3, Jacques-Olivier Klein3, Claude Chappert3, Hao CAI1, Lirida Naviner1

1. LTCI, Télécom ParisTech, Université Paris-Saclay, 75013, Paris, France 2. Fert Beijing Institute, BDBC and School of Electronic and Information Engineering, Beihang Univeristy, Beijing, 100191, China 3. IEF, Univ. Paris-Sud/CNRS UMR 8622, Orsay, 91405, France

<p>Spin Transfer Torque Magnetic Tunnel Junction (STT-MTJ) is a promising candidate for non-volatile memories thanks to its high speed, low power, infinite endurance and easy integration with CMOS circuits. However, a relatively...

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Version 1.0 - published on 06 Mar 2017 doi:10.4231/D31834386 - cite this

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This models includes the mechanism of time dependent dielectric breakdown (TDDB) in oxide barrier and the simulation results show great consistency with the experimental measurements.

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