An accurate compact model based on physical mechanisms for dual-gate bilayer graphene FETs is presented. This model is developed based on the 2-D density of states of bilayer graphene and is implemented in Verilog-A. Furthermore, physical equations describing the behavior of the source and drain access regions under back-gate bias are proposed. The accuracy of the developed large-signal compact model has been verified by comparison with measurement data from the literature.

• Physics-Based Compact Model for Dual-Gate Bilayer Graphene FETs 1.0.0 Verilog-A(ZIP | 8 KB)
• Physics-Based Compact Model for Dual-Gate Bilayer Graphene FETs 1.0.0 Benchmarks(ZIP | 398 KB)
• Physics-Based Compact Model for Dual-Gate Bilayer Graphene FETs 1.0.0 Parameters(ZIP | 1 KB)
• Physics-Based Compact Model for Dual-Gate Bilayer Graphene FETs 1.0.0 Experimental Data(ZIP | 56 KB)
• Physics-Based Compact Model for Dual-Gate Bilayer Graphene FETs 1.0.0 Manual(PDF | 891 KB)
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[1] J.D. Aguirre Morales, S. Frégonèse, C. Mukherjee, C. Maneux, and T. Zimmer, "An Accurate Physics-Based Compact Model for Dual-Gate Bilayer Graphene FETs", IEEE Trans. Electron Devices, vol. 62, no. 12, pp. 4333-4339, Dec. 2015.

[2] C. Mukherjee, J.-D. Aguirre-Morales, S. Frégonèse, T. Zimmer, and C. Maneux, “Versatile compact model for graphene FET targeting reliability-aware circuit design,” IEEE Trans. Electron Devices, vol. 62, no. 3, pp. 757–763, Mar. 2015.

[3] S. Frégonèse, M. Magallo, C. Maneux, H. Happy, and T. Zimmer, “Scalable electrical compact modeling for graphene FET transistors,” IEEE Trans. Nanotechnol., vol. 12, no. 4, pp. 539–546, Jul. 2013.

Researchers should cite this work as follows:

• Aguirre Morales, J.; Frégonèse, S.; Mukherjee, C.; Maneux, C.; Zimmer, T. (2016). Physics-Based Compact Model for Dual-Gate Bilayer Graphene FETs. nanoHUB. doi:10.4231/D30C4SM1H

  BibTex | EndNote

1. Bilayer
2. Compact Model
3. graphene
4. Nano Electro-Mechanical Systems (NEMS)
5. NEMS/MEMS
6. Nonlinear
7. resonator
8. silicon
9. Verilog-A