MVS Nanotransistor Model (Silicon) 1.1.1

By Shaloo Rakheja1, Dimitri Antoniadis1

Massachusetts Institute of Technology (MIT)

The MIT Virtual Source (MVS) model is a semi-empirical compact model for nanoscale transistors that accurately describes the physics of quasi-ballistic transistors with only a few physical parameters.

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Version 1.1.1 - published on 02 Dec 2015 doi:10.4231/D3RR1PN6M - cite this

Licensed under NEEDS Modified CMC License according to these terms

Description

 

See more compact models using the MIT Virtual Source (MVS) Model

The MIT Virtual Source (MVS) model is a semi-empirical compact model for nanoscale transistors that accurately describes the physics of quasi-ballistic transistors with only a few physical parameters.

Provided below are the Verilog-A version of the MVS 1.1.0 ETSOI model. Also provided below is a MATLAB version of this model ("mvs_si_1_1_0.m"). 

 

Key References

A. Khakifirooz, O. M. Nayfeh, and D. A. Antoniadis, "A Simple Semiempirical Short-Channel MOSFET Current-Voltage Model Continuous Across All Regions of Operation and Employing Only Physical Parameters," IEEE Trans. Electron Dev., vol. 56, pp. 1674-1680, 2009. download

L. Wei, O. Mysore, and D. A. Antoniadis, "Virtual-Source Based Self-Consistent Current and Charge FET Models – From Ballistic to Drift-Diffusion Velocity-Saturation Operation," IEEE, Trans. Electron Dev., vol. 59, pp. 1263-1271, 2012.

Mark S. Lundstrom and Dimitri A. Antoniadis, “Compact Models and the Physics of Nanoscale FETs,” IEEE Trans. Electron Devices, Vol. 99, pp. 225-233, 2014.

For a seminar on the essential physics that underlies the MVS model, see Mark Lundstrom's online Seminar: From Lilienfeld to Landauer: Understanding the nanoscale transistor

The virtual source model plays a central role in Mark Lundstrom's online course, "Nanoscale Transistors" , a 5-week short course available for free on nanoHUB-U.

 

 

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