UARK SiC Power MOSFET Model 1.0.0

By Mihir Mudholkar1, Shamim Ahmed1, Ramchandra Kotecha1, Ty McNutt1, Arman Ur Rashid1, Tom Vrotsos1, Alan Mantooth1

University of Arkansas Fayetteville

A compact model for SiC Power MOSFETs is presented. The model features a physical description of the channel current and internal capacitances and has been validated for dc, CV, and switching characteristics with measured data from C2M0025120D.

Listed in Compact Models | publication by group NEEDS: Nano-Engineered Electronic Device Simulation Node

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Version 1.0.0 - published on 23 Feb 2017 doi:10.4231/D3QF8JK88 - cite this

Licensed under NEEDS Modified CMC License according to these terms

Description

A new compact model for SiC power MOSFETs has been presented. The model features an accurate description of the MOS channel, drift region, nonlinear capacitances, and the internal charges. A description for the gradual transition of drain current from linear to saturation region with increasing drain bias has been included using a transition parameter in the model. The model also features temperature scaling of its parameters to provide a single parameter set for the entire operating temperature range of the power MOSFET. A powerful yet simple parameter extraction methodology has also been developed, which relies on device data available in device datasheets for off-the-shelf devices. The model’s static and dynamic performance has been validated using data from a 1200-V,90-A SiC MOSFET (C2M0025120D) in a temperature range of 25 oC to 150 oC.

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Key References

  1. T. R. McNutt, A. R. Hefner, H. A. Mantooth, D. Berning, and S. H. Ryu, “ Silicon carbide power MOSFET model and parameter extraction sequence,” IEEE Trans. Power Electron., vol. 22, no. 2, pp. 353-363, Mar. 2007.
  2. M. Mudholkar, S. Ahmed, M. N. Ericson, S. S. Frank, C. L. Britton, Jr., H. A. Mantooth, “Datasheet driven silicon carbide power MOSFET model”, IEEE Trans. Power Electron, vol. 29, no. 5, pp 2220-2228, May 2014.

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Notes

This material is based upon work supported by the National Science Foundation under Award Number IIP-1465243.