nMOSFET RF and noise model on standard 45nm SOI technology 1.0.0
A compact scalable model suitable for predicting high frequency noise and nonlinear behavior of N-type Metal Oxide Semiconductor (NMOS) transistors is presented.
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Version 1.0.0 - published on 05 Jan 2017 doi:10.4231/D3833N04K - cite this
Licensed under NEEDS Modified CMC License according to these terms
Description
This is a high frequency nonlinear model that accurately captures the DC, RF and noise behavior of NMOS transistors on standard 45nm SOI technology. The model employs the MIT-VS model as the DC core, adds to it various RF features and a new noise model.
Model Release Components ( Show bundle contents ) Bundle
nMOSFET RF and noise model on standard 45nm SOI technology 1.0.0 Verilog-A(VA | 6 KB)- nMOSFET RF and noise model on standard 45nm SOI technology 1.0.0 Benchmarks(VAR/WWW/NANOHUB/APP/SITE/PUBLICATIONS/00160/00173/KCW762D3A1/BENCHMARKS/DC_SPARA_NOISE | 1 KB)
- nMOSFET RF and noise model on standard 45nm SOI technology 1.0.0 Parameters(M | 16 KB)
nMOSFET RF and noise model on standard 45nm SOI technology 1.0.0 Experimental Data(ZIP | 698 KB)
nMOSFET RF and noise model on standard 45nm SOI technology 1.0.0 Manual(PDF | 2 MB)- License terms
Key References
Shaloo Rakheja, Dimitri Antoniadis (2015). MVS Nanotransistor Model (Silicon). nanoHUB. doi:10.4231/D3RR1PN6M
Cite this work
Researchers should cite this work as follows:
- Shen, Y.; Mohammadi, S. (2017). nMOSFET RF and noise model on standard 45nm SOI technology. nanoHUB. doi:10.4231/D3833N04K
Notes
Initial release of the model.