nMOSFET RF and noise model on standard 45nm SOI technology

Name: nMOSFET RF and noise model on standard 45nm SOI technology
Published: 2017-01-01
License: NEEDS Modified CMC License

Yanfei Shen; Saeed Mohammadi

doi:10.4231/D3833N04K

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nMOSFET RF and noise model on standard 45nm SOI technology 1.0.0

By Yanfei Shen¹, Saeed Mohammadi¹

Purdue University

A compact scalable model suitable for predicting high frequency noise and nonlinear behavior of N-type Metal Oxide Semiconductor (NMOS) transistors is presented.

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Version 1.0.0 - published on 05 Jan 2017 doi:10.4231/D3833N04K - cite this

Licensed under NEEDS Modified CMC License according to these terms

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Kejun Xia, Colin McAndrew, (2018), "JFETIDG: A Compact Model For Independent Dual-Gate JFETs With Junction Or MOS Gates", IEEE TRANSACTIONS ON ELECTRON DEVICES, IEEE, 65, 2: pg: 747-755, (DOI: 10.1109/TED.2017.2786043)
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