Stanford 2D Semiconductor Quasi-Ballistic Transistor Compact Model 1.0.0
The S2DSb compact model is based on MVS model and captures the quasi-ballistic transport in two-dimensional field effect transistors (2D FETs). It also includes a detailed device self-heating model and temperature effects for sub-10 nm 2D FETs.
Listed in Compact Models | publication by group NEEDS: New Era Electronic Devices and Systems
Additional materials available
Version 1.0.0 - published on 14 Aug 2018 doi:10.4231/D3F18SH56 - cite this
Licensed under NEEDS Modified CMC License according to these terms
Supporting Docs
Stanford 2D Semiconductor Quasi-Ballistic Transistor Compact Model 1.0.0 Verilog-A(VA | 13 KB)
Stanford 2D Semiconductor Quasi-Ballistic Transistor Compact Model 1.0.0 Benchmarks(ZIP | 2 KB)
Stanford 2D Semiconductor Quasi-Ballistic Transistor Compact Model 1.0.0 Parameters(PDF | 314 KB)- Stanford 2D Semiconductor Quasi-Ballistic Transistor Compact Model 1.0.0 Experimental Data(ZIP | 2 KB)
- Stanford 2D Semiconductor Quasi-Ballistic Transistor Compact Model 1.0.0 Manual(PDF | 413 KB)
NEEDS: New Era Electronic Devices and Systems
This publication belongs to the NEEDS: New Era Electronic Devices and Systems group.