UCSB 2D Transition-Metal-Dichalcogenide (TMD) FET model 1.0.0
a compact model for 2D TMD FET considering the effect of mobility degradation, interface traps, and insufficient doping in the source/drain extension regions
Listed in Compact Models | publication by group NEEDS: New Era Electronic Devices and Systems
Additional materials available
Version 1.0.0 - published on 25 Mar 2015 doi:10.4231/D37940V7H - cite this
Licensed under NEEDS Modified CMC License according to these terms
Versions
Version | Released | DOI Handle | Status | |
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1.0.0 | Mar 25, 2015 | 10.4231/D37940V7H | published | view version » |
NEEDS: New Era Electronic Devices and Systems
This publication belongs to the NEEDS: New Era Electronic Devices and Systems group.