Compact model for Perpendicular Magnetic Anisotropy Magnetic Tunnel Junction 4.5

By You WANG1, Yue ZHANG2, Jacques-Olivier Klein3, Thibaut Devolder3, Dafiné Ravelosona3, Claude Chappert3, Weisheng Zhao2

1. Institut Mines-Téléecom, Télécom-ParisTech, LTCI-CNRS-UMR 5141, Paris CEDEX 13, 75634, France 2. Spintronics Interdisciplinary Center, Beihang University, Beijing 100191, China 3. Institut d’Electronique Fondamentale, CNRS UMR 8622, University of Paris-Sud 11, 91405 Orsay, France

This STT PMA MTJ model integrates the physical models of static, dynamic behaviors and reliability issues, which can be used to perform more accurate and complex reliability analysis of complex hybrid circuits before fabrication.

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Version 4.5 - published on 09 Nov 2015 doi:10.4231/D3154DQ21 - cite this

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Description

 

Magnetic tunnel junctions (MTJs) composed of ferromagnetic layers with perpendicular magnetic anisotropy (PMA) are of great interest for achieving high-density non-volatile memory and logic circuits owing to its features of fast access speed, low power, scalability potential and high thermal stability. We present a SPICE-compatible model of CoFeB/MgO/CoFeB PMA MTJ, exhibiting the best tunnel magneto-resistance ratio and switching performance. The MTJ structure consists of(from the substrate side) Ta(5)/Ru(10)/Ta(5)/Co20Fe60B20(1.3) /MgO(0.85) /Co20Fe60B20(1.3) /Ta(5) /Ru(5) (numbers are nominal thicknesses in nanometers). It integrates the physical models of static, dynamic behaviors and reliability issues, e.g. process parameters variation, stochastic behaviors and temperature fluctuation due to Joule heating. Many experimental parameters are directly included to improve the agreement of simulation with measurements. In order to validate its functionality, reliability analysis of hybrid MTJ/CMOS writing and reading circuits has been carried out by performing Monte-Carlo simulations. This model can be used to perform more accurate and complex reliability analysis of complex hybrid circuits before fabrication.

 

 

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Key References

References of the model

1. Y. Wang et al., “Compact model of magnetic tunnel junction with stochastic spin transfer torque switching for reliability analyses,” Microelectronics Reliability, vol. 54, pp. 1774–1778, 2014.

2. Y. Zhang et al., “Electrical modeling of stochastic spin transfer torque writing in magnetic tunnel junctions for memory and logic applications,”  IEEE Transactions on Magnetics, vol. 49, no. 7, pp. 4375–4378, July 2013.

3. Y. Zhang et al., “Compact modeling of perpendicular-anisotropy CoFeB/MgO magnetic tunnel junctions,”  IEEE Transactions on Electron Devices, vol. 59, no. 3, pp. 819–826, March 2012.

References of the model application

4. E. Y. Deng et al., "Low power magnetic full-adder based on spin transfer torque MRAM," IEEE Transactions on Magnetics, vol. 49, no. 9, pp. 4982-4987, 2013.

5. E. Y. Deng et al., "Design Optimization and Analysis of Multi-Context STT-MTJ/CMOS Logic Circuits," IEEE Transactions on Nanotechnology, vol. 14, no. 1, pp. 169-177, 2014.

6. E. Y. Deng et al., "Synchronous 8-Bit Non-Volatile Full-Adder based on Spin Transfer Torque Magnetic Tunnel Junction," to be in published in IEEE Transactions on Circuits and Systems I. 

 

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