CCAM Compact Carbon Nanotube Field-Effect Transistor Model 2.0.3

By Michael Schroter1, Max Haferlach2, Martin Claus2

1. UCSD 2. Technische Universität Dresden

CCAM is a semi-physical carbon nanotube field-effect transistor model applicable for digital, analog and high frequency applications.

Listed in Compact Models | publication by group NEEDS: Nano-Engineered Electronic Device Simulation Node

Download Bundle

Additional materials available

Version 2.0.3 - published on 07 Oct 2015 doi:10.4231/D3VD6P595 - cite this

Licensed under NEEDS Modified CMC License according to these terms

cntfet_tg.png

Description

Compact Carbon Nanotube Field-Effect Transistor Model (CCAM) is a semi-physical carbon nanotube compact model that accurately describes the shape of DC and small-signal characteristics of fabricated carbon nano-tube FETs (CNTFETs). The model allows, for a given gate length, geometry scaling from single-finger single-tube to multi-finger multi-tube transistors. The features include parasitics, ambipolar transport, dynamic behavior and trap model. The model shows excellent agreement with the data from both the Boltzmann transport equation and measurements of Schottky-barrier CNTFETs and has been implemented in Verilog-A, making it widely available across circuit simulators.

Model Release Components ( Show bundle contents ) Bundle

Cite this work

Researchers should cite this work as follows: