See more compact models using the MIT Virtual Source (MVS) Model

This version of the MVS model is specifically targeted toward III-V HEMT devices that show a reduction in the transconductance at high drain currents.The model also accounts for the quantum mechanical correction to the gate-channel capacitance.

Finally, the static transport model is supplemented with a charge partioning model. As in the previous MVS model versions, we provide the drift-diffusion non-velocity saturation model (DD-NVSAT) and blended quasi-ballistic charge model.

Provided below are the Verilog-A version of the MVS 1.2.0 HEMT model. Also provided below is a MATLAB version of this model ("mvs_hemt_1_2_0.m"). 

• MVS III-V HEMT model 1.2.0 Verilog-A(VA | 14 KB)
• MVS III-V HEMT model 1.2.0 Benchmarks(ZIP | 1 KB)
• MVS III-V HEMT model 1.2.0 Parameters(ZIP | 10 KB)
• MVS III-V HEMT model 1.2.0 Experimental Data(ZIP | 9 KB)
• MVS III-V HEMT model 1.2.0 Manual(PDF | 7 MB)
• mvs_hemt_1_2_0.m(M | 10 KB)
• License terms

Researchers should cite this work as follows:

• Rakheja, S.; Antoniadis, D. (2015). MVS III-V HEMT model. (Version 1.2.0). nanoHUB. doi:10.4231/D37S7HT39

  BibTex | EndNote

1. Compact Model
2. HEMT
3. nanotransistors
4. NEEDS node

Model MVS_HEMT_1_2_0

This version of the MVS model is specifically targeted toward III-V HEMT devices that show a reduction in the transconductance at high drain currents.
The model also accounts for the quantum mechanical correction to the gate-channel capacitance. 
Finally, the static transport model is supplemented with a charge partioning model. As in the previous MVS model versions, we provide the drift-diffusion non-velocity saturation model (DD-NVSAT) and blended quasi-ballistic charge model.

Files included in the release:

a. MATLAB MODEL FILE: mvs_hemt_1_2_0.m.

b. MATLAB  MODEL EXERCISER - I: model_ex_mvs1p2.m --> shows the model calibration with III-V HEMT experimental data

c. MATLAB MODEL EXERCISER - II: model_ex_plotting.m --> plots current, charges and their derivatives

d. VERILOG-A MODEL FILE: mvs_hemt_1_2_0.va 

e. SPECTRE NETLISTS: hemt_dc.scs (DC simulation) and tran_hemt_inverter.scs (transient simulation of the inverter circuit)

f. FITTING PARAMETERS: We have provided fitting parameters for Leff = 30 nm, 40 nm, 50 nm, 80 nm, and 130 nm InGaAs HEMT devices fabricated at MIT.

g. EXPERIMENT: Folder containing experimental data: output, transfer, and tranconductance of all HEMTs. Additionally, C-V s-parameter measurement of 30-nm HEMT is also provided.

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Reference for experimental data:
D. H. Kim, J. A. del Alamo, D. A. Antoniadis, and B. Brar, "Extraction of virtual-source injection velocity in sub-100 nm III-V HFETs," presented at IEEE Electron Devices Meeting (IEDM), 2009.

Reference for non-linear access resistance:
D.R. Greenberg and J. A. del Alamo, “Velocity saturation in extrinsic device: a fundamental limit in HFET’s,” IEEE Transactions on Electron Devices, vol. 41, no. 8, pp. 1334-1339, Aug. 1994.

Reference for Stern correction to gate-channel capacitance:
F. Stern, “Self-consistent results for n-type Si inversion layers,” Physical Review B, vol. 5, pp. 4891-4899, June 1972.