MVS III-V HEMT model 1.2.0

By Shaloo Rakheja1, Dimitri Antoniadis1

Massachusetts Institute of Technology (MIT)

The MIT Virtual Source (MVS) model is a semi-empirical compact model for nanoscale transistors that accurately describes the physics of quasi-ballistic transistors with only a few physical parameters. This model is designed for HEMT.

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Version 1.2.0 - published on 01 Dec 2015 doi:10.4231/D37S7HT39 - cite this

Licensed under NEEDS Modified CMC License according to these terms


See more compact models using the MIT Virtual Source (MVS) Model

This version of the MVS model is specifically targeted toward III-V HEMT devices that show a reduction in the transconductance at high drain currents.The model also accounts for the quantum mechanical correction to the gate-channel capacitance.

Finally, the static transport model is supplemented with a charge partioning model. As in the previous MVS model versions, we provide the drift-diffusion non-velocity saturation model (DD-NVSAT) and blended quasi-ballistic charge model.

Provided below are the Verilog-A version of the MVS 1.2.0 HEMT model. Also provided below is a MATLAB version of this model ("mvs_hemt_1_2_0.m"). 

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