MIT Virtual Source GaN HEMT-High Voltage (MVSG-HV) compact model 1.0.0

By Ujwal Radhakrishna1, Dimitri Antoniadis2

1. Massachusetts Institute of Technology (MIT) 2. Massachusetts Institute of Technology

MIT Virtual Source GaN HEMT-High Voltage (MVSG-HV) model is a charge based physical model for HV-GaN HEMTs suitable for power switching applications.

Listed in Compact Models | publication by group NEEDS: Nano-Engineered Electronic Device Simulation Node

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Version 1.0.0 - published on 31 Aug 2015 doi:10.4231/D3086365H - cite this

Licensed under NEEDS Modified CMC License according to these terms


See more compact models using the MIT Virtual Source (MVS) Model

The MVSG-HV model is a physical model for HV-GaN HEMTs that includes formulations for currents and charges that can be used for HV circuit simulations. The model includes the effect of source and drain access regions, field plates: currents and charges, gate leakage, and self-heating effects.

The model in this release has been benchmarked against fabricated device IV- and CV- measurements with the model parameters provided along with benchmarked data. The optimization routine setup in ICCAP(commercial simulator) is also provided.

Circuit-level validation of the model is performed against a commercial HV- converter board and the simulation bench files along with the model and circuit-measurement results are included in the release.

The manual for the model and the simulation results are provided.

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Key References

-U. Radhakrishna, T. Imada, T. Palacios, D. Antoniadis, " MIT Virtual Source GaNFET-high voltage (MVSG-HV) model: A physics based compact model for HV-GaN HEMTs," Physica status solidi (c) 11 (3‐4), 848-852. 

-Ujwal Radhakrisna, "A Compact Transport and Charge Model for GaN-based High Electron Mobility Transistors for RF applications," Masters Thesis, Massachusetts Institute of Technology, June 2013.

-U. Radhakrishna, D. Piedra, Y. Zhang, T. Palacios, D. Antoniadis, "High Voltage GaN HEMTs Compact Model: Experimental Verification, Field Plate Optimization and Charge Trapping," Electron Devices Meeting (IEDM), 2013 IEEE International, 9-11, 2013.

-Radhakrishna, U., Antoniadis, D. (2014). MIT Virtual Source GaNFET-RF ( MVSG-RF) Model. nanoHUB. doi:10.4231/D3G15TC12

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