MVS Nanotransistor Model 2.0.0

By Shaloo Rakheja1, Dimitri Antoniadis1

Massachusetts Institute of Technology (MIT)

The MIT Virtual Source (MVS) model is a semi-empirical compact model for nanoscale transistors that accurately describes the physics of quasi-ballistic transistors with only a few physical parameters.

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Version 2.0.0 - published on 01 Dec 2015 doi:10.4231/D3416T10C - cite this

Licensed under NEEDS Modified CMC License according to these terms

Description

See more compact models using the MIT Virtual Source (MVS) Model

MVS 2.0.0 is an improved physics-based virtual source (VS) model to describe transport in quasi- ballistic transistors. The model is based on Landauer scattering theory and incorporates the effects of (i) degeneracy on thermal velocity and mean free path of carriers in the channel, (ii) drain-bias dependence of gate capacitance and VS charge including the effects of band non-parabolicity, and (iii) non-linear resistance of the extrinsic device region on gm-degradation at high drain currents in the channel.

Provided below are the Verilog-A version of the MVS 2.0.0 ETSOI and HEMT models. Also provided below are MATLAB versions of the models ("mvs_2_0_0_etsoi.m" and "mvs_2_0_0_hemt.m"). 

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Notes

MVS 2.0.0 provides two implementations:

1. For III-V HEMTs which have degeneracy and gm-reduction under high drain current
2. For Si ETSOI devices which operate under non degeneracy and do not have any gm-reduction.

MVS 2.0.0 provides only static transport model. Partitioned charges are not included in this version. 

Files included in the release:
1. Model implementation in MATLAB and Verilog-A for both HEMTs and Si ETSOI
2. Model exerciser in MATLAB to plot various outputs
3. Experimental data 
4. SPECTRE NETLISTs for DC simulation of the transistors
5. Model Documentation

For SPECTRE files, only the nettlist corresponding to the DC simulation of the transistor is provided.

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References: 

S. Rakheja, M. Lundstrom, D. Antoniadis, “An Improved Virtual-Source-Based Transport Model for Quasi-Ballistic Transistors – Part I: Capturing Effects of Carrier Degeneracy, Drain-Bias Dependence of Gate Capacitance, and Non-linear Channel-Access Resistance," accepted for publication in IEEE Transactions on Electron Devices.

S. Rakheja, M. Lundstrom, D. Antoniadis, "An Improved Virtual-Source-Based Transport Model for Quasi-Ballistic Transistors – Part II: Experimental Verification," accepted for publication in IEEE Transactions on Electron Devices.

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