The MIT Virtual Source (MVS) model is a semi-empirical compact model for nanoscale transistors that accurately describes the physics of quasi-ballistic transistors with only a few physical parameters.
Listed in Compact Models
MVS 2.0.0 is an improved physics-based virtual source (VS) model to describe transport in quasi- ballistic transistors. The model is based on Landauer scattering theory and incorporates the effects of (i) degeneracy on thermal velocity and mean free path of carriers in the channel, (ii) drain-bias dependence of gate capacitance and VS charge including the effects of band non-parabolicity, and (iii) non-linear resistance of the extrinsic device region on gm-degradation at high drain currents in the channel.
Model Release Components ( Show bundle contents ) Bundle
- MVS Nanotransistor Model 2.0.0 Verilog-A(ZIP | 8 KB)
- MVS Nanotransistor Model 2.0.0 Benchmarks(ZIP | 1 KB)
- MVS Nanotransistor Model 2.0.0 Parameters(ZIP | 35 KB)
- MVS Nanotransistor Model 2.0.0 Experimental Data(ZIP | 8 KB)
- MVS Nanotransistor Model 2.0.0 Manual(PDF | 1 MB)
- mvs_2_0_0_etsoi.m(M | 7 KB)
- mvs_2_0_0_hemt.m(M | 9 KB)
- License terms