MVS Nanotransistor Model 2.0.0

By Shaloo Rakheja1, Dimitri Antoniadis1

Massachusetts Institute of Technology (MIT)

The MIT Virtual Source (MVS) model is a semi-empirical compact model for nanoscale transistors that accurately describes the physics of quasi-ballistic transistors with only a few physical parameters.

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Version 2.0.0 - published on 01 Dec 2015 doi:10.4231/D3416T10C - cite this

Licensed under NEEDS Modified CMC License according to these terms


See more compact models using the MIT Virtual Source (MVS) Model

MVS 2.0.0 is an improved physics-based virtual source (VS) model to describe transport in quasi- ballistic transistors. The model is based on Landauer scattering theory and incorporates the effects of (i) degeneracy on thermal velocity and mean free path of carriers in the channel, (ii) drain-bias dependence of gate capacitance and VS charge including the effects of band non-parabolicity, and (iii) non-linear resistance of the extrinsic device region on gm-degradation at high drain currents in the channel.

Provided below are the Verilog-A version of the MVS 2.0.0 ETSOI and HEMT models. Also provided below are MATLAB versions of the models ("mvs_2_0_0_etsoi.m" and "mvs_2_0_0_hemt.m"). 

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