Publications: All

  1. A Verilog-A Compact Model for Negative Capacitance FET

    2017-11-09 16:55:37 | Compact Models | Contributor(s): Muhammad Abdul Wahab, Muhammad A. Alam | doi:10.4231/D3QZ22K3Z

    The NC-FET compact model is a semi-physical verilog-A model of the negative capacitance transistor. We developed this self-consistent model with BSIM4/MVS and Landau theory. This model is useful to design NC-FET for high speed and low power...
  2. CNRS - Carbon Nanotube Interconnect RC Model

    2017-11-09 16:25:31 | Compact Models | Contributor(s): Jie LIANG, Aida Todri | doi:10.4231/D3SJ19T14

    A carbon nanotube interconnect compact model is developed with fundamental physics understanding and electrical modeling. Single Wall Carbon Nanotube (SWCNT) RC electrical model takes into the account the quantum resistance and capacitance, as well as electrostatic capacitance. A doped...

  3. Notre Dame TFET Model

    2017-09-01 17:35:14 | Compact Models | Contributor(s): Hao Lu, Trond Ytterdal, Alan Seabaugh | doi:10.4231/D3CF9J852

    Notre Dame TFET compact model version 2.1.0.
  4. NNCI Modeling/Simulation Tools List

    2017-07-26 16:54:45 | Datasets | Contributor(s): NNCI Computation | doi:10.4231/D3930NX3C

    NNCI Modeling/Simulation Tools List provides a collective inventory of modeling and simulation resources and capabilities across NNCI sites and includes helpful information such as a point of contact for each tool, any access restrictions, and academic citations.
  5. JFETIDG Model for Independent Dual-Gate JFETs

    2017-07-27 12:55:51 | Compact Models | Contributor(s): Colin McAndrew, Kejun Xia | doi:10.4231/D3KK94F1N

    JFETIDG is a compact model for independent dual-gate JFETs. It is also applicable to: resistors with metal shields; the drift region of LDMOS transistors; the collector resistance of vertical bipolar transistors; and junctionless MOS transistors.
  6. Compact model for Perpendicular Magnetic Anisotropy Magnetic Tunnel Junction

    2017-08-25 13:34:10 | Compact Models | Contributor(s): You WANG, Yue ZHANG, Jacques-Olivier Klein, Thibaut Devolder, Dafiné Ravelosona, Claude Chappert, Weisheng Zhao | doi:10.4231/D3W37KX7D

    This STT PMA MTJ model integrates the physical models of static, dynamic behaviors and reliability issues, which can be used to perform more accurate and complex reliability analysis of complex hybrid circuits before fabrication.
  7. MIT TFET compact model including the impacts of non-idealities

    2017-05-08 02:34:24 | Compact Models | Contributor(s): Redwan Noor Sajjad, Ujwal Radhakrishna, Dimitri Antoniadis | doi:10.4231/D3XW47X6W

    We present a physics based compact model for Tunnel Field Effect Transistor (TFET), MIT TFET compact model, that captures the device physics of TFETs including non-idealities such as the interface Trap Assisted Tunneling (TAT) and intrinsic band steepness. The model matches several recent...

  8. UCSB Graphene Nanoribbon Interconnect Compact Model

    2017-05-03 21:16:20 | Compact Models | Contributor(s): Junkai Jiang, Kaustav Banerjee, Wei Cao | doi:10.4231/D3NK3663N

    As the (local) interconnect dimension scales down to sub-20 nm, the rapidly increasing metal resistance by barrier layer and surface and grain boundary scatterings, and the diminishing current carrying capacity by self-heating and Joule-heating, the metal (Cu) interconnect cannot meet the...

  9. Optical Ring Modulator with MIT Virtual Source ModSpec Compact Model

    2017-05-03 21:19:10 | Compact Models | Contributor(s): Lily Weng | doi:10.4231/D3PK0732D

    The optical ring modulator presented here is a vertical junction resonant
    microring/disk modulator which can achieve high modulation speed, lower
    power consumption, and compact size. The MIT virtual source model is a semi-empirical model describing the current and

  10. Thermoelectric Device Compact Model

    2017-03-27 13:46:21 | Compact Models | Contributor(s): Xufeng Wang, Kyle Conrad, Jesse Maassen, Mark Lundstrom | doi:10.4231/D3PN8XG7R

    The NEEDS thermoelectric compact model describes a homogeneous segment of thermoelectric material and serves as a basic building block for complex electrothermal system.
  11. Nano Education Resources

    2017-03-14 15:32:54 | Datasets | Contributor(s): Quinn Spadola, Lisa Friedersdorf | doi:10.4231/D3K35MF70

    This is a database of nanoeducation resources that can be searched, filtered, and sorted. Resources are listed by topic area, grade level, core discipline, STEM content area, and resource type.
  12. MIT Virtual Source Negative Capacitance (MVSNC) model

    2017-03-07 01:06:52 | Compact Models | Contributor(s): Ujwal Radhakrishna, Asif Islam Khan, Sayeef Salahuddin, Dimitri Antoniadis | doi:10.4231/D3K649T9T

    MIT Virtual Source Negative FET (MVSNC) model is a compact model for negative capacitance transistors that use a FE-oxide in the gate stack to achieve internal voltage amplification and steep subthreshold swing.
  13. UARK SiC Power MOSFET Model

    2017-02-23 14:45:14 | Compact Models | Contributor(s): Mihir Mudholkar, Shamim Ahmed, Ramchandra Kotecha, Ty McNutt, Arman Ur Rashid, Tom Vrotsos, Alan Mantooth | doi:10.4231/D3QF8JK88

    A compact model for SiC Power MOSFETs is presented. The model features a physical description of the channel current and internal capacitances and has been validated for dc, CV, and switching characteristics with measured data from C2M0025120D.
  14. nMOSFET RF and noise model on standard 45nm SOI technology

    2017-01-05 16:57:48 | Compact Models | Contributor(s): Yanfei Shen, Saeed Mohammadi | doi:10.4231/D3833N04K

    A compact scalable model suitable for predicting high frequency noise and nonlinear behavior of N-type Metal Oxide Semiconductor (NMOS) transistors is presented.
  15. Compact Model of Dielectric Breakdown in Spin Transfer Torque Magnetic Tunnel Junction

    2017-01-09 19:41:25 | Compact Models | Contributor(s): You Wang, Yue Zhang, Weisheng Zhao, Yahya Lakys, Dafine Ravelosona, Jacques-Olivier Klein, Claude Chappert, Lirida Alves de Barros Naviner, Hao Cai | doi:10.4231/D3TT4FV2X

    Spin Transfer Torque Magnetic Tunnel Junction (STT-MTJ) is a promising candidate for non-volatile memories thanks to its high speed, low power, infinite endurance and easy integration with CMOS circuits. However, a relatively high current flowing through MTJ is always...

  16. Optical Ring Modulator ModSpec Compact Model

    2017-01-05 16:54:03 | Compact Models | Contributor(s): Lily Weng, Tianshi Wang | doi:10.4231/D31N7XN9P

    The optical ring modulator presented here is a vertical junction resonant microring/disk modulator which can achieve high modulation speed, lower power consumption and compact size. A Matlab-based ModSpec compact model is developed and simulated in this project.

  17. Flexible Transition Metal Dichalcogenide Field-Effect Transistor (TMDFET) Model

    2016-05-04 03:37:43 | Compact Models | Contributor(s): Morteza Gholipour, Deming Chen | doi:10.4231/D3TM72243

    Verilog-A model of flexible transition metal dichalcogenide field-effect transistors (TMDFETs), considering effects when scaling the transistor size down to the 16-nm technology node. This model can be used for circuit-level simulations.

  18. Physics-Based Compact Model for Dual-Gate Bilayer Graphene FETs

    2016-04-07 19:19:34 | Compact Models | Contributor(s): Jorge-Daniel Aguirre Morales, Sébastien Frégonèse, Chhandak Mukherjee, Cristell Maneux, Thomas Zimmer | doi:10.4231/D30C4SM1H

    A compact model for simulation of Dual-Gate Bilayer Graphene FETs based on physical equations.
  19. Stanford 2D Semiconductor (S2DS) Transistor Model

    2016-04-05 01:09:39 | Compact Models | Contributor(s): Saurabh Vinayak Suryavanshi, Eric Pop | doi:10.4231/D3ZC7RV9X

    The Stanford 2D Semiconductor (S2DS) model is a physics-based, compact model for field-effect transistors (FETs) based on two-dimensional (2D) semiconductors such as MoS2.
  20. Database of The Big Ideas in Nanoscale Science and Engineering (NSTA)

    2016-03-25 20:23:57 | Datasets | Contributor(s): Tanya Faltens | doi:10.4231/D3HH6C69T

    This database lists the 9 Big Ideas of Nanoscale Science and Engineering along with the Learning Goals associated with each Big Idea. Instructors should refer to the NSTA publication, "The Big Ideas of Nanoscale Science & Engineering, A Guidebook for Secondary Teachers" (c) 2009 NSTA Press (156...