Physics-Based Compact Model for Dual-Gate Bilayer Graphene FETs

2016-04-07 19:19:34 | Contributor(s): Jorge-Daniel Aguirre Morales, Sébastien Frégonèse, Chhandak Mukherjee, Cristell Maneux, Thomas Zimmer | doi:10.4231/D30C4SM1H

A compact model for simulation of Dual-Gate Bilayer Graphene FETs based on physical equations.

Double-Clamped Silicon NEMS Resonators Model

2016-03-07 16:45:06 | Contributor(s): Yanfei Shen, Scott Calvert, Jeffrey F. Rhoads, Saeed Mohammadi | doi:10.4231/D37659G7N

This model is built for a silicon-based, double-clamped (source and drain), double-gate beam. The model takes into account capacitive modulation with the two gates, piezoresistive modulation through the beam and electrical parasitic elements.

MVS Nanotransistor Model (Silicon)

2015-12-02 17:03:59 | Contributor(s): Shaloo Rakheja, Dimitri Antoniadis | doi:10.4231/D3RR1PN6M

The MIT Virtual Source (MVS) model is a semi-empirical compact model for nanoscale transistors that accurately describes the physics of quasi-ballistic transistors with only a few physical parameters.

MVS III-V HEMT model

2015-12-01 16:40:24 | Contributor(s): Shaloo Rakheja, Dimitri Antoniadis | doi:10.4231/D37S7HT39

The MIT Virtual Source (MVS) model is a semi-empirical compact model for nanoscale transistors that accurately describes the physics of quasi-ballistic transistors with only a few physical parameters. This model is designed for HEMT.

MVS Nanotransistor Model

2015-12-01 15:13:44 | Contributor(s): Shaloo Rakheja, Dimitri Antoniadis | doi:10.4231/D3416T10C

The MIT Virtual Source (MVS) model is a semi-empirical compact model for nanoscale transistors that accurately describes the physics of quasi-ballistic transistors with only a few physical parameters.

Non-Faradaic Impedance-based Biosensor Model

2015-09-26 14:54:22 | Contributor(s): Piyush Dak, Muhammad A. Alam | doi:10.4231/D3PR7MV7M

The non-Faradaic impedance model is a physics-based compact model that describes the small-signal operation of a sensor that relies on electrochemical detection of analyte molecules.

Optical Ring Filter (ORF) Modspec Compact Model

2015-09-24 18:35:26 | Contributor(s): Lily Weng, Tianshi Wang | doi:10.4231/D3125QB06

The MIT ORF Modspec Compact Model provides a compact model of an optical ring filter on Model and Algorithm Prototyping Platform. It describes transmission behavior of the filter when operating with several hundreds terahertz light signals.

Released Resonant Body Transistor with MIT Virtual Source (RBT-MVS) Model

2015-08-31 00:00:00 | Contributor(s): Bichoy W. Bahr, Dana Weinstein, Luca Daniel | doi:10.4231/D3VH5CK04

An RBT is a micro-electromechanical (MEM) resonator with a transistor (FET) incorporated into the resonator structure to sense the mechanical vibrations. This is a fully-featured spice-compatible compact model for fast analysis of RBTs.

MIT Virtual Source GaN HEMT-High Voltage (MVSG-HV) compact model

2015-08-31 13:49:15 | Contributor(s): Ujwal Radhakrishna, Dimitri Antoniadis | doi:10.4231/D3086365H

MIT Virtual Source GaN HEMT-High Voltage (MVSG-HV) model is a charge based physical model for HV-GaN HEMTs suitable for power switching applications.

Verilog-A implementation of the compact model for organic thin-film transistors oTFT

2015-06-16 12:26:13 | Contributor(s): Ognian Marinov | doi:10.4231/D3R785Q3B

Compact model oTFT supports mobility bias enhancement, contact effects, channel modulation and leakage in organic thin-film transistors. Version 2.04.01 “mirrors” TFT in all regimes of operation by DC, AC and transient simulations.

Berkeley VCSEL Compact Model

2015-06-02 18:58:52 | Contributor(s): Adair Gerke, Connie J. Chang-Hasnain | doi:10.4231/D3T43J40H

The U.C. Berkeley Vertical Cavity Surface Emitting Laser (VCSEL) Compact Model provides a circuit simulator compatible Verilog-A model of VCSEL lasers, primarily for use in designing direct-modulation driver circuits for optical interconnects.

General and Junction Primitives for Verilog-A Compact Models

2015-04-30 19:38:05 | Contributor(s): Colin McAndrew, Geoffrey Coram | doi:10.4231/D3G15TC2J

Useful macros and analog function building blocks for compact models.

UCSB Graphene Nanoribbon Interconnect Compact Model

2015-04-30 14:25:13 | Contributor(s): Junkai Jiang, Wei Cao, Kaustav Banerjee | doi:10.4231/D34Q7QR19

UCSB GNR interconnect model is based on a distributed RLC circuit, in which carrier mean free path, graphene doping concentration (Fermi level) and number of layers are considered. The model was originally published by UCSB NRL group.

III-V Tunnel FET Model

2015-04-21 13:49:00 | Contributor(s): Huichu Liu, Vinay Saripalli, Vijaykrishnan Narayanan, Suman Datta | doi:10.4231/D30Z70X8D

The III-V Tunnel FET Model is a look-up table based model, where the device current and capacitance characteristics are obtained from calibrated TCAD Sentaurus simulation.

Stanford Virtual-Source Carbon Nanotube Field-Effect Transistors Model

2015-04-09 14:21:12 | Contributor(s): Chi-Shuen Lee, H.-S. Philip Wong | doi:10.4231/D3BK16Q68

The VSCNFET model captures the dimensional scaling properties and includes parasitic resistance, capacitance, and tunneling leakage currents. The model aims for CNFET technology assessment for the sub-10-nm technology nodes.

UCSB 2D Transition-Metal-Dichalcogenide (TMD) FET model

2015-03-25 17:05:28 | Contributor(s): Wei Cao, Kaustav Banerjee | doi:10.4231/D37940V7H

a compact model for 2D TMD FET considering the effect of mobility degradation, interface traps, and insufficient doping in the source/drain extension regions

Universal TFET model

2015-01-26 14:08:11 | Contributor(s): Hao Lu, Trond Ytterdal, Alan Seabaugh | doi:10.4231/D3901ZG9H

A universal TFET compact model implemented in verilog-A

mCell Model

2015-01-20 00:40:32 | Contributor(s): David M. Bromberg, Daniel H. Morris | doi:10.4231/D3CR5ND3Q

This model is a hybrid physics/empirical compact model that describes digital switching behavior of an mCell logic devices, where a write current moves a domain wall to switch the resistance of a magnetic tunnel junction between stable states.

R3

2014-11-21 15:20:44 | Contributor(s): Colin McAndrew | doi:10.4231/D3QB9V64G

Compact model for polysilicon (poly) resistors, 3-terminal JFETs, and diffused resistors.

FET pH Sensor Model

2015-06-04 14:39:01 | Contributor(s): Piyush Dak, Muhammad A. Alam | doi:10.4231/D30000150

The FET pH sensor model is a surface potential compact model for FET based pH sensors that accurately describes the physics of electrolyte and surface charges that respond to pH.