Publications: Compact Models

  1. MVS Nanotransistor Model (Silicon)

    2015-12-02 17:03:59 | Contributor(s): Shaloo Rakheja, Dimitri Antoniadis | doi:10.4231/D3RR1PN6M

    The MIT Virtual Source (MVS) model is a semi-empirical compact model for nanoscale transistors that accurately describes the physics of quasi-ballistic transistors with only a few physical parameters.
  2. nMOSFET RF and noise model on standard 45nm SOI technology

    2017-01-05 16:57:48 | Contributor(s): Yanfei Shen, Saeed Mohammadi | doi:10.4231/D3833N04K

    A compact scalable model suitable for predicting high frequency noise and nonlinear behavior of N-type Metal Oxide Semiconductor (NMOS) transistors is presented.
  3. Non-Faradaic Impedance-based Biosensor Model

    2015-09-26 14:54:22 | Contributor(s): Piyush Dak, Muhammad A. Alam | doi:10.4231/D3PR7MV7M

    The non-Faradaic impedance model is a physics-based compact model that describes the small-signal operation of a sensor that relies on electrochemical detection of analyte molecules.
  4. Notre Dame TFET Model

    2017-09-01 17:35:14 | Contributor(s): Hao Lu, Trond Ytterdal, Alan Seabaugh | doi:10.4231/D3CF9J852

    Notre Dame TFET compact model version 2.1.0.
  5. Optical Ring Filter (ORF) Modspec Compact Model

    2015-09-24 18:35:26 | Contributor(s): Lily Weng, Tianshi Wang | doi:10.4231/D3125QB06

    The MIT ORF Modspec Compact Model provides a compact model of an optical ring filter on Model and Algorithm Prototyping Platform. It describes transmission behavior of the filter when operating with several hundreds terahertz light signals.
  6. Optical Ring Modulator ModSpec Compact Model

    2017-01-05 16:54:03 | Contributor(s): Lily Weng, Tianshi Wang | doi:10.4231/D31N7XN9P

    The optical ring modulator presented here is a vertical junction resonant microring/disk modulator which can achieve high modulation speed, lower power consumption and compact size. A Matlab-based ModSpec compact model is developed and simulated in this project.

  7. Optical Ring Modulator with MIT Virtual Source ModSpec Compact Model

    2017-05-03 21:19:10 | Contributor(s): Lily Weng | doi:10.4231/D3PK0732D

    The optical ring modulator presented here is a vertical junction resonant
    microring/disk modulator which can achieve high modulation speed, lower
    power consumption, and compact size. The MIT virtual source model is a semi-empirical model describing the current and

  8. Physics-Based Compact Model for Dual-Gate Bilayer Graphene FETs

    2016-04-07 19:19:34 | Contributor(s): Jorge-Daniel Aguirre Morales, Sébastien Frégonèse, Chhandak Mukherjee, Cristell Maneux, Thomas Zimmer | doi:10.4231/D30C4SM1H

    A compact model for simulation of Dual-Gate Bilayer Graphene FETs based on physical equations.
  9. Purdue Nanoelectronics Research Laboratory Magnetic Tunnel Junction Model

    2014-10-23 20:13:09 | Contributor(s): Xuanyao Fong, Sri Harsha Choday, Panagopoulos Georgios, Charles Augustine, Kaushik Roy | doi:10.4231/D33R0PV04

    This is the Verilog-A model of the magnetic tunnel junction developed by the Nanoelectronics Research Laboratory at Purdue University.
  10. R3

    2014-11-21 15:20:44 | Contributor(s): Colin McAndrew | doi:10.4231/D3QB9V64G

    Compact model for polysilicon (poly) resistors, 3-terminal JFETs, and diffused resistors.
  11. Released Resonant Body Transistor (RBT) Model

    2014-10-23 19:00:45 | Contributor(s): Bichoy W. Bahr, Dana Weinstein, Luca Daniel | doi:10.4231/D3KS6J55W

    An RBT is a micro-electromechanical (MEM) resonator with a transistor (FET) incorporated into the resonator structure to sense the mechanical vibrations. The model is aimed to present a deep insight into the physics of the RBT.
  12. Released Resonant Body Transistor with MIT Virtual Source (RBT-MVS) Model

    2015-08-31 00:00:00 | Contributor(s): Bichoy W. Bahr, Dana Weinstein, Luca Daniel | doi:10.4231/D3VH5CK04

    An RBT is a micro-electromechanical (MEM) resonator with a transistor (FET) incorporated into the resonator structure to sense the mechanical vibrations. This is a fully-featured spice-compatible compact model for fast analysis of RBTs.
  13. Spin Switch Model

    2014-10-28 13:21:08 | Contributor(s): Samiran Ganguly, Kerem Yunus Camsari, Supriyo Datta | doi:10.4231/D3C824F8D

    We present a circuit/compact model for the Spin Switch created using a Verilog-A based library of "spintronic lego blocks" building upon previous works on spin transport.
  14. Stanford 2D Semiconductor (S2DS) Transistor Model

    2016-04-05 01:09:39 | Contributor(s): Saurabh Vinayak Suryavanshi, Eric Pop | doi:10.4231/D3ZC7RV9X

    The Stanford 2D Semiconductor (S2DS) model is a physics-based, compact model for field-effect transistors (FETs) based on two-dimensional (2D) semiconductors such as MoS2.
  15. Stanford University Resistive-Switching Random Access Memory (RRAM) Verilog-A Model

    2014-10-23 20:13:21 | Contributor(s): Zizhen Jiang, H.-S. Philip Wong | doi:10.4231/D37H1DN48

    The Stanford University RRAM Model is a SPICE-compatible compact model which describes switching performance for bipolar metal oxide RRAM.
  16. Stanford Virtual-Source Carbon Nanotube Field-Effect Transistors Model

    2015-04-09 14:21:12 | Contributor(s): Chi-Shuen Lee, H.-S. Philip Wong | doi:10.4231/D3BK16Q68

    The VSCNFET model captures the dimensional scaling properties and includes parasitic resistance, capacitance, and tunneling leakage currents. The model aims for CNFET technology assessment for the sub-10-nm technology nodes.
  17. TAG Solar Cell Model (p-i-n thin film)

    2014-10-23 17:59:16 | Contributor(s): Sourabh Dongaonkar, Xingshu Sun, Mark Lundstrom, Muhammad A. Alam | doi:10.4231/D3V97ZS4G

    The TAG solar cell model is a physics-based compact model for p-i-n thin film solar cells that can be used for panel level simulations.
  18. Thermoelectric Device Compact Model

    2017-03-27 13:46:21 | Contributor(s): Xufeng Wang, Kyle Conrad, Jesse Maassen, Mark Lundstrom | doi:10.4231/D3PN8XG7R

    The NEEDS thermoelectric compact model describes a homogeneous segment of thermoelectric material and serves as a basic building block for complex electrothermal system.
  19. UARK SiC Power MOSFET Model

    2017-02-23 14:45:14 | Contributor(s): Mihir Mudholkar, Shamim Ahmed, Ramchandra Kotecha, Ty McNutt, Arman Ur Rashid, Tom Vrotsos, Alan Mantooth | doi:10.4231/D3QF8JK88

    A compact model for SiC Power MOSFETs is presented. The model features a physical description of the channel current and internal capacitances and has been validated for dc, CV, and switching characteristics with measured data from C2M0025120D.
  20. UCSB 2D Transition-Metal-Dichalcogenide (TMD) FET model

    2015-03-25 17:05:28 | Contributor(s): Wei Cao, Kaustav Banerjee | doi:10.4231/D37940V7H

    a compact model for 2D TMD FET considering the effect of mobility degradation, interface traps, and insufficient doping in the source/drain extension regions