Publications: Compact Models

  1. Stanford 2D Semiconductor Quasi-Ballistic Transistor Compact Model

    2018-08-15 02:33:04 | Contributor(s): Saurabh Vinayak Suryavanshi, Eric Pop | doi:10.4231/D3F18SH56

    The S2DSb compact model is based on MVS model and captures the quasi-ballistic transport in two-dimensional field effect transistors (2D FETs). It also includes a detailed device self-heating model and temperature effects for sub-10 nm 2D FETs.
  2. Stanford University Resistive-Switching Random Access Memory (RRAM) Verilog-A Model

    2014-10-23 20:13:21 | Contributor(s): Zizhen Jiang, H.-S. Philip Wong | doi:10.4231/D37H1DN48

    The Stanford University RRAM Model is a SPICE-compatible compact model which describes switching performance for bipolar metal oxide RRAM.
  3. Stanford Virtual-Source Carbon Nanotube Field-Effect Transistors Model

    2015-04-09 14:21:12 | Contributor(s): Chi-Shuen Lee, H.-S. Philip Wong | doi:10.4231/D3BK16Q68

    The VSCNFET model captures the dimensional scaling properties and includes parasitic resistance, capacitance, and tunneling leakage currents. The model aims for CNFET technology assessment for the sub-10-nm technology nodes.
  4. TAG Solar Cell Model (p-i-n thin film)

    2014-10-23 17:59:16 | Contributor(s): Sourabh Dongaonkar, Xingshu Sun, Mark Lundstrom, Muhammad A. Alam | doi:10.4231/D3V97ZS4G

    The TAG solar cell model is a physics-based compact model for p-i-n thin film solar cells that can be used for panel level simulations.
  5. Thermoelectric Device Compact Model

    2017-03-27 13:46:21 | Contributor(s): Xufeng Wang, Kyle Conrad, Jesse Maassen, Mark Lundstrom | doi:10.4231/D3PN8XG7R

    The NEEDS thermoelectric compact model describes a homogeneous segment of thermoelectric material and serves as a basic building block for complex electrothermal system.
  6. UARK SiC Power MOSFET Model

    2017-02-23 14:45:14 | Contributor(s): Mihir Mudholkar, Shamim Ahmed, Ramchandra Kotecha, Ty McNutt, Arman Ur Rashid, Tom Vrotsos, Alan Mantooth | doi:10.4231/D3QF8JK88

    A compact model for SiC Power MOSFETs is presented. The model features a physical description of the channel current and internal capacitances and has been validated for dc, CV, and switching characteristics with measured data from C2M0025120D.
  7. UCSB 2D Transition-Metal-Dichalcogenide (TMD) FET model

    2015-03-25 17:05:28 | Contributor(s): Wei Cao, Kaustav Banerjee | doi:10.4231/D37940V7H

    a compact model for 2D TMD FET considering the effect of mobility degradation, interface traps, and insufficient doping in the source/drain extension regions
  8. UCSB Graphene Nanoribbon Interconnect Compact Model

    2015-04-30 14:25:13 | Contributor(s): Junkai Jiang, Wei Cao, Kaustav Banerjee | doi:10.4231/D34Q7QR19

    UCSB GNR interconnect model is based on a distributed RLC circuit, in which carrier mean free path, graphene doping concentration (Fermi level) and number of layers are considered. The model was originally published by UCSB NRL group.
  9. UCSB Graphene Nanoribbon Interconnect Compact Model

    2017-05-03 21:16:20 | Contributor(s): Junkai Jiang, Kaustav Banerjee, Wei Cao | doi:10.4231/D3NK3663N

    This model describes the circuit-level behavior of the (intercalation) doped GNR interconnect, and is compatible with both DC and transient SPICE simulations.
  10. Universal TFET model

    2015-01-26 14:08:11 | Contributor(s): Hao Lu, Trond Ytterdal, Alan Seabaugh | doi:10.4231/D3901ZG9H

    A universal TFET compact model implemented in verilog-A
  11. Unreleased 1D CMOS Resonant Body Transistor with MIT Virtual Source (URBT-MVS) Model

    2016-03-31 16:40:15 | Contributor(s): Bichoy W. Bahr, Dana Weinstein, Luca Daniel

    An RBT is a micro-electromechanical (MEM) resonator with a transistor (FET) incorporated into the resonator structure to sense the mechanical vibrations.
  12. Verilog-A implementation of the compact model for organic thin-film transistors oTFT

    2015-06-16 12:26:13 | Contributor(s): Ognian Marinov | doi:10.4231/D3R785Q3B

    Compact model oTFT supports mobility bias enhancement, contact effects, channel modulation and leakage in organic thin-film transistors. Version 2.04.01 “mirrors” TFT in all regimes of operation by DC, AC and transient simulations.