Publications: Compact Models

  1. nMOSFET RF and noise model on standard 45nm SOI technology

    2017-01-05 16:57:48 | Contributor(s): Yanfei Shen, Saeed Mohammadi | doi:10.4231/D3833N04K

    A compact scalable model suitable for predicting high frequency noise and nonlinear behavior of N-type Metal Oxide Semiconductor (NMOS) transistors is presented.
  2. Optical Ring Modulator ModSpec Compact Model

    2017-01-05 16:54:03 | Contributor(s): Lily Weng, Tianshi Wang | doi:10.4231/D31N7XN9P

    The optical ring modulator presented here is a vertical junction resonant microring/disk modulator which can achieve high modulation speed, lower power consumption and compact size. A Matlab-based ModSpec compact model is developed and simulated.
  3. Flexible Transition Metal Dichalcogenide Field-Effect Transistor (TMDFET) Model

    2016-05-04 03:37:43 | Contributor(s): Morteza Gholipour, Deming Chen | doi:10.4231/D3TM72243

    Verilog-A model of flexible transition metal dichalcogenide field-effect transistors (TMDFETs), considering effects when scaling the transistor size down to the 16-nm technology node.
  4. Physics-Based Compact Model for Dual-Gate Bilayer Graphene FETs

    2016-04-07 19:19:34 | Contributor(s): Jorge-Daniel Aguirre Morales, Sébastien Frégonèse, Chhandak Mukherjee, Cristell Maneux, Thomas Zimmer | doi:10.4231/D30C4SM1H

    A compact model for simulation of Dual-Gate Bilayer Graphene FETs based on physical equations.
  5. Double-Clamped Silicon NEMS Resonators Model

    2016-03-07 16:45:06 | Contributor(s): Yanfei Shen, Scott Calvert, Jeffrey F. Rhoads, Saeed Mohammadi | doi:10.4231/D37659G7N

    This model is built for a silicon-based, double-clamped (source and drain), double-gate beam. The model takes into account capacitive modulation with the two gates, piezoresistive modulation through the beam and electrical parasitic elements.
  6. MVS Nanotransistor Model (Silicon)

    2015-12-02 17:03:59 | Contributor(s): Shaloo Rakheja, Dimitri Antoniadis | doi:10.4231/D3RR1PN6M

    The MIT Virtual Source (MVS) model is a semi-empirical compact model for nanoscale transistors that accurately describes the physics of quasi-ballistic transistors with only a few physical parameters.
  7. MVS III-V HEMT model

    2015-12-01 16:40:24 | Contributor(s): Shaloo Rakheja, Dimitri Antoniadis | doi:10.4231/D37S7HT39

    The MIT Virtual Source (MVS) model is a semi-empirical compact model for nanoscale transistors that accurately describes the physics of quasi-ballistic transistors with only a few physical parameters. This model is designed for HEMT.
  8. MVS Nanotransistor Model

    2015-12-01 15:13:44 | Contributor(s): Shaloo Rakheja, Dimitri Antoniadis | doi:10.4231/D3416T10C

    The MIT Virtual Source (MVS) model is a semi-empirical compact model for nanoscale transistors that accurately describes the physics of quasi-ballistic transistors with only a few physical parameters.
  9. CCAM Compact Carbon Nanotube Field-Effect Transistor Model

    2015-10-07 14:56:43 | Contributor(s): Michael Schroter, Max Haferlach, Martin Claus | doi:10.4231/D3VD6P595

    CCAM is a semi-physical carbon nanotube field-effect transistor model applicable for digital, analog and high frequency applications.
  10. Non-Faradaic Impedance-based Biosensor Model

    2015-09-26 14:54:22 | Contributor(s): Piyush Dak, Muhammad A. Alam | doi:10.4231/D3PR7MV7M

    The non-Faradaic impedance model is a physics-based compact model that describes the small-signal operation of a sensor that relies on electrochemical detection of analyte molecules.
  11. Optical Ring Filter (ORF) Modspec Compact Model

    2015-09-24 18:35:26 | Contributor(s): Lily Weng, Tianshi Wang | doi:10.4231/D3125QB06

    The MIT ORF Modspec Compact Model provides a compact model of an optical ring filter on Model and Algorithm Prototyping Platform. It describes transmission behavior of the filter when operating with several hundreds terahertz light signals.
  12. Released Resonant Body Transistor with MIT Virtual Source (RBT-MVS) Model

    2015-08-31 00:00:00 | Contributor(s): Bichoy W. Bahr, Dana Weinstein, Luca Daniel | doi:10.4231/D3VH5CK04

    An RBT is a micro-electromechanical (MEM) resonator with a transistor (FET) incorporated into the resonator structure to sense the mechanical vibrations. This is a fully-featured spice-compatible compact model for fast analysis of RBTs.
  13. MIT Virtual Source GaN HEMT-High Voltage (MVSG-HV) compact model

    2015-08-31 13:49:15 | Contributor(s): Ujwal Radhakrishna, Dimitri Antoniadis | doi:10.4231/D3086365H

    MIT Virtual Source GaN HEMT-High Voltage (MVSG-HV) model is a charge based physical model for HV-GaN HEMTs suitable for power switching applications.
  14. Verilog-A implementation of the compact model for organic thin-film transistors oTFT

    2015-06-16 12:26:13 | Contributor(s): Ognian Marinov | doi:10.4231/D3R785Q3B

    Compact model oTFT supports mobility bias enhancement, contact effects, channel modulation and leakage in organic thin-film transistors. Version 2.04.01 “mirrors” TFT in all regimes of operation by DC, AC and transient simulations.
  15. Berkeley VCSEL Compact Model

    2015-06-02 18:58:52 | Contributor(s): Adair Gerke, Connie J. Chang-Hasnain | doi:10.4231/D3T43J40H

    The U.C. Berkeley Vertical Cavity Surface Emitting Laser (VCSEL) Compact Model provides a circuit simulator compatible Verilog-A model of VCSEL lasers, primarily for use in designing direct-modulation driver circuits for optical interconnects.
  16. General and Junction Primitives for Verilog-A Compact Models

    2015-04-30 19:38:05 | Contributor(s): Colin McAndrew, Geoffrey Coram | doi:10.4231/D3G15TC2J

    Useful macros and analog function building blocks for compact models.
  17. UCSB Graphene Nanoribbon Interconnect Compact Model

    2015-04-30 14:25:13 | Contributor(s): Junkai Jiang, Wei Cao, Kaustav Banerjee | doi:10.4231/D34Q7QR19

    UCSB GNR interconnect model is based on a distributed RLC circuit, in which carrier mean free path, graphene doping concentration (Fermi level) and number of layers are considered. The model was originally published by UCSB NRL group.
  18. III-V Tunnel FET Model

    2015-04-21 13:49:00 | Contributor(s): Huichu Liu, Vinay Saripalli, Vijaykrishnan Narayanan, Suman Datta | doi:10.4231/D30Z70X8D

    The III-V Tunnel FET Model is a look-up table based model, where the device current and capacitance characteristics are obtained from calibrated TCAD Sentaurus simulation.
  19. Stanford Virtual-Source Carbon Nanotube Field-Effect Transistors Model

    2015-04-09 14:21:12 | Contributor(s): Chi-Shuen Lee, H.-S. Philip Wong | doi:10.4231/D3BK16Q68

    The VSCNFET model captures the dimensional scaling properties and includes parasitic resistance, capacitance, and tunneling leakage currents. The model aims for CNFET technology assessment for the sub-10-nm technology nodes.
  20. UCSB 2D Transition-Metal-Dichalcogenide (TMD) FET model

    2015-03-25 17:05:28 | Contributor(s): Wei Cao, Kaustav Banerjee | doi:10.4231/D37940V7H

    a compact model for 2D TMD FET considering the effect of mobility degradation, interface traps, and insufficient doping in the source/drain extension regions