Publications: Compact Models

  1. Universal TFET model

    2015-01-26 14:08:11 | Contributor(s): Hao Lu, Trond Ytterdal, Alan Seabaugh | doi:10.4231/D3901ZG9H

    A universal TFET compact model implemented in verilog-A
  2. mCell Model

    2015-01-20 00:40:32 | Contributor(s): David M. Bromberg, Daniel H. Morris | doi:10.4231/D3CR5ND3Q

    This model is a hybrid physics/empirical compact model that describes digital switching behavior of an mCell logic devices, where a write current moves a domain wall to switch the resistance of a magnetic tunnel junction between stable states.
  3. R3

    2014-11-21 15:20:44 | Contributor(s): Colin McAndrew | doi:10.4231/D3QB9V64G

    Compact model for polysilicon (poly) resistors, 3-terminal JFETs, and diffused resistors.
  4. FET pH Sensor Model

    2015-06-04 14:39:01 | Contributor(s): Piyush Dak, Muhammad A. Alam | doi:10.4231/D30000150

    The FET pH sensor model is a surface potential compact model for FET based pH sensors that accurately describes the physics of electrolyte and surface charges that respond to pH.
  5. Spin Switch Model

    2014-10-28 13:21:08 | Contributor(s): Samiran Ganguly, Kerem Yunus Camsari, Supriyo Datta | doi:10.4231/D3C824F8D

    We present a circuit/compact model for the Spin Switch created using a Verilog-A based library of "spintronic lego blocks" building upon previous works on spin transport.
  6. Stanford University Resistive-Switching Random Access Memory (RRAM) Verilog-A Model

    2014-10-23 20:13:21 | Contributor(s): Zizhen Jiang, H.-S. Philip Wong | doi:10.4231/D37H1DN48

    The Stanford University RRAM Model is a SPICE-compatible compact model which describes switching performance for bipolar metal oxide RRAM.
  7. Purdue Nanoelectronics Research Laboratory Magnetic Tunnel Junction Model

    2014-10-23 20:13:09 | Contributor(s): Xuanyao Fong, Sri Harsha Choday, Panagopoulos Georgios, Charles Augustine, Kaushik Roy | doi:10.4231/D33R0PV04

    This is the Verilog-A model of the magnetic tunnel junction developed by the Nanoelectronics Research Laboratory at Purdue University.
  8. TAG Solar Cell Model (p-i-n thin film)

    2014-10-23 17:59:16 | Contributor(s): Sourabh Dongaonkar, Xingshu Sun, Mark Lundstrom, Muhammad A. Alam | doi:10.4231/D3V97ZS4G

    The TAG solar cell model is a physics-based compact model for p-i-n thin film solar cells that can be used for panel level simulations.
  9. Released Resonant Body Transistor (RBT) Model

    2014-10-23 19:00:45 | Contributor(s): Bichoy W. Bahr, Dana Weinstein, Luca Daniel | doi:10.4231/D3KS6J55W

    An RBT is a micro-electromechanical (MEM) resonator with a transistor (FET) incorporated into the resonator structure to sense the mechanical vibrations. The model is aimed to present a deep insight into the physics of the RBT.
  10. MIT Virtual Source GaNFET-RF ( MVSG-RF) Model

    2014-10-23 18:43:25 | Contributor(s): Ujwal Radhakrishna, Dimitri Antoniadis | doi:10.4231/D3G15TC12

    The MVS-G-RF GaN HEMT model is a self-consistent transport/capacitance model for scaled GaN HEMT devices used in RF applications.
  11. Ambipolar Virtual Source Compact Model for Graphene FETs

    2014-10-23 18:47:56 | Contributor(s): Shaloo Rakheja, Dimitri Antoniadis | doi:10.4231/D3MS3K273

    This is a compact physics-based ambipolar-virtual-source (AVS) model that describes carrier transport in both unipolar and ambipolar regimes in quasi-ballistic graphene field-effect transistors (GFETs).
  12. Unreleased 1D CMOS Resonant Body Transistor with MIT Virtual Source (URBT-MVS) Model

    2016-03-31 16:40:15 | Contributor(s): Bichoy W. Bahr, Dana Weinstein, Luca Daniel

    An RBT is a micro-electromechanical (MEM) resonator with a transistor (FET) incorporated into the resonator structure to sense the mechanical vibrations.