Publications: Compact Models

  1. A Verilog-A Compact Model for Negative Capacitance FET

    2017-03-10 14:20:14 | Contributor(s): Muhammad Abdul Wahab, Muhammad A. Alam | doi:10.4231/D30863660

    The NC-FET compact model is a semi-physical verilog-A model of the negative capacitance transistor. We developed this self-consistent model with BSIM4/MVS and Landau theory. This model is useful to design NC-FET for high speed and low power...
  2. Ambipolar Virtual Source Compact Model for Graphene FETs

    2014-10-23 18:47:56 | Contributor(s): Shaloo Rakheja, Dimitri Antoniadis | doi:10.4231/D3MS3K273

    This is a compact physics-based ambipolar-virtual-source (AVS) model that describes carrier transport in both unipolar and ambipolar regimes in quasi-ballistic graphene field-effect transistors (GFETs).
  3. Berkeley VCSEL Compact Model

    2015-06-02 18:58:52 | Contributor(s): Adair Gerke, Connie J. Chang-Hasnain | doi:10.4231/D3T43J40H

    The U.C. Berkeley Vertical Cavity Surface Emitting Laser (VCSEL) Compact Model provides a circuit simulator compatible Verilog-A model of VCSEL lasers, primarily for use in designing direct-modulation driver circuits for optical interconnects.
  4. CCAM Compact Carbon Nanotube Field-Effect Transistor Model

    2015-10-07 14:56:43 | Contributor(s): Michael Schroter, Max Haferlach, Martin Claus | doi:10.4231/D3VD6P595

    CCAM is a semi-physical carbon nanotube field-effect transistor model applicable for digital, analog and high frequency applications.
  5. Compact model for Perpendicular Magnetic Anisotropy Magnetic Tunnel Junction

    2015-11-09 15:06:34 | Contributor(s): You WANG, Yue ZHANG, Jacques-Olivier Klein, Thibaut Devolder, Dafiné Ravelosona, Claude Chappert, Weisheng Zhao | doi:10.4231/D3154DQ21

    This STT PMA MTJ model integrates the physical models of static, dynamic behaviors and reliability issues, which can be used to perform more accurate and complex reliability analysis of complex hybrid circuits before fabrication.
  6. Compact Model of Dielectric Breakdown in Spin Transfer Torque Magnetic Tunnel Junction

    2017-01-09 19:41:25 | Contributor(s): You Wang, Yue Zhang, Weisheng Zhao, Yahya Lakys, Dafine Ravelosona, Jacques-Olivier Klein, Claude Chappert, Lirida Alves de Barros Naviner, Hao Cai | doi:10.4231/D3TT4FV2X

    Spin Transfer Torque Magnetic Tunnel Junction (STT-MTJ) is a promising candidate for non-volatile memories thanks to its high speed, low power, infinite endurance and easy integration with CMOS circuits. However, a relatively high current flowing through MTJ is always...

  7. Double-Clamped Silicon NEMS Resonators Model

    2016-03-07 16:45:06 | Contributor(s): Yanfei Shen, Scott Calvert, Jeffrey F. Rhoads, Saeed Mohammadi | doi:10.4231/D37659G7N

    Micro/Nanoelectromechanical systems (M/NEMS) are gaining great momentum and interest in a variety of
    applications, such as high-sensitivity mass sensing, tunable signal filtering and precision timing. They possess
    inherently high quality factors and can provide narrow bandwidth...

  8. FET pH Sensor Model

    2015-06-04 14:39:01 | Contributor(s): Piyush Dak, Muhammad A. Alam | doi:10.4231/D30000150

    The FET pH sensor model is a surface potential compact model for FET based pH sensors that accurately describes the physics of electrolyte and surface charges that respond to pH.
  9. Flexible Transition Metal Dichalcogenide Field-Effect Transistor (TMDFET) Model

    2016-05-04 03:37:43 | Contributor(s): Morteza Gholipour, Deming Chen | doi:10.4231/D3TM72243

    Verilog-A model of flexible transition metal dichalcogenide field-effect transistors (TMDFETs), considering effects when scaling the transistor size down to the 16-nm technology node. This model can be used for circuit-level simulations.

  10. General and Junction Primitives for Verilog-A Compact Models

    2015-04-30 19:38:05 | Contributor(s): Colin McAndrew, Geoffrey Coram | doi:10.4231/D3G15TC2J

    Useful macros and analog function building blocks for compact models.
  11. III-V Tunnel FET Model

    2015-04-21 13:49:00 | Contributor(s): Huichu Liu, Vinay Saripalli, Vijaykrishnan Narayanan, Suman Datta | doi:10.4231/D30Z70X8D

    The III-V Tunnel FET Model is a look-up table based model, where the device current and capacitance characteristics are obtained from calibrated TCAD Sentaurus simulation.
  12. JFETIDG Model for Independent Dual-Gate JFETs

    2017-04-02 21:33:13 | Contributor(s): Colin McAndrew, Kejun Xia | doi:10.4231/D3TD9N91H

    JFETIDG is a compact model for independent dual-gate JFETs. It is also applicable to: resistors with metal shields; the drift region of LDMOS transistors; the collector resistance of vertical bipolar transistors; and junctionless MOS transistors.
  13. mCell Model

    2015-01-20 00:40:32 | Contributor(s): David M. Bromberg, Daniel H. Morris | doi:10.4231/D3CR5ND3Q

    This model is a hybrid physics/empirical compact model that describes digital switching behavior of an mCell logic devices, where a write current moves a domain wall to switch the resistance of a magnetic tunnel junction between stable states.
  14. MIT Virtual Source GaN HEMT-High Voltage (MVSG-HV) compact model

    2015-08-31 13:49:15 | Contributor(s): Ujwal Radhakrishna, Dimitri Antoniadis | doi:10.4231/D3086365H

    MIT Virtual Source GaN HEMT-High Voltage (MVSG-HV) model is a charge based physical model for HV-GaN HEMTs suitable for power switching applications.
  15. MIT Virtual Source GaNFET-RF ( MVSG-RF) Model

    2014-10-23 18:43:25 | Contributor(s): Ujwal Radhakrishna, Dimitri Antoniadis | doi:10.4231/D3G15TC12

    The MVS-G-RF GaN HEMT model is a self-consistent transport/capacitance model for scaled GaN HEMT devices used in RF applications.
  16. MIT Virtual Source Negative Capacitance (MVSNC) model

    2017-03-07 01:06:52 | Contributor(s): Ujwal Radhakrishna, Asif Islam Khan, Sayeef Salahuddin, Dimitri Antoniadis | doi:10.4231/D3K649T9T

    MIT Virtual Source Negative FET (MVSNC) model is a compact model for negative capacitance transistors that use a FE-oxide in the gate stack to achieve internal voltage amplification and steep subthreshold swing.
  17. MVS III-V HEMT model

    2015-12-01 16:40:24 | Contributor(s): Shaloo Rakheja, Dimitri Antoniadis | doi:10.4231/D37S7HT39

    The MIT Virtual Source (MVS) model is a semi-empirical compact model for nanoscale transistors that accurately describes the physics of quasi-ballistic transistors with only a few physical parameters. This model is designed for HEMT.
  18. MVS Nanotransistor Model

    2015-12-01 15:13:44 | Contributor(s): Shaloo Rakheja, Dimitri Antoniadis | doi:10.4231/D3416T10C

    The MIT Virtual Source (MVS) model is a semi-empirical compact model for nanoscale transistors that accurately describes the physics of quasi-ballistic transistors with only a few physical parameters.
  19. MVS Nanotransistor Model (Silicon)

    2015-12-02 17:03:59 | Contributor(s): Shaloo Rakheja, Dimitri Antoniadis | doi:10.4231/D3RR1PN6M

    The MIT Virtual Source (MVS) model is a semi-empirical compact model for nanoscale transistors that accurately describes the physics of quasi-ballistic transistors with only a few physical parameters.
  20. nMOSFET RF and noise model on standard 45nm SOI technology

    2017-01-05 16:57:48 | Contributor(s): Yanfei Shen, Saeed Mohammadi | doi:10.4231/D3833N04K

    A compact scalable model suitable for predicting high frequency noise and nonlinear behavior of N-type Metal Oxide Semiconductor (NMOS) transistors is presented.