Find information on common issues.

Ask questions and find answers from other users.

Suggest a new site feature or improvement.

Check on status of your tickets.

A Verilog-A Compact Model for Negative Capacitance FET

2017-11-09 16:55:37 | Contributor(s): Muhammad Abdul Wahab, Muhammad A. Alam | doi:10.4231/D3QZ22K3Z

Ambipolar Virtual Source Compact Model for Graphene FETs

2014-10-23 18:47:56 | Contributor(s): Shaloo Rakheja, Dimitri Antoniadis | doi:10.4231/D3MS3K273

Berkeley VCSEL Compact Model

2015-06-02 18:58:52 | Contributor(s): Adair Gerke, Connie J. Chang-Hasnain | doi:10.4231/D3T43J40H

CCAM Compact Carbon Nanotube Field-Effect Transistor Model

2015-10-07 14:56:43 | Contributor(s): Michael Schroter, Max Haferlach, Martin Claus | doi:10.4231/D3VD6P595

CNRS - Carbon Nanotube Interconnect RC Model

2017-11-09 16:25:31 | Contributor(s): Jie LIANG, Aida Todri | doi:10.4231/D3SJ19T14

A carbon nanotube interconnect compact model is developed with fundamental physics understanding and electrical modeling. Single Wall Carbon Nanotube (SWCNT) RC electrical model takes into the account the quantum resistance and capacitance, as well as electrostatic capacitance. A doped...

Compact model for Perpendicular Magnetic Anisotropy Magnetic Tunnel Junction

2018-04-16 17:57:57 | Contributor(s): You WANG, Yue ZHANG, Weisheng Zhao, Jacques-Olivier Klein, Dafiné Ravelosona, Hao Cai, Lirida Naviner

Compact Model of Dielectric Breakdown in Spin Transfer Torque Magnetic Tunnel Junction

2018-04-16 17:57:33 | Contributor(s): You Wang, Yue Zhang, Weisheng Zhao, Dafine Ravelosona, Jacques-Olivier Klein, Lirida Naviner, Hao Cai

Double-Clamped Silicon NEMS Resonators Model

2016-03-07 16:45:06 | Contributor(s): Yanfei Shen, Scott Calvert, Jeffrey F. Rhoads, Saeed Mohammadi | doi:10.4231/D37659G7N

Micro/Nanoelectromechanical systems (M/NEMS) are gaining great momentum and interest in a variety of applications, such as high-sensitivity mass sensing, tunable signal filtering and precision timing. They possess inherently high quality factors and can provide narrow bandwidth...

FET pH Sensor Model

2015-06-04 14:39:01 | Contributor(s): Piyush Dak, Muhammad A. Alam | doi:10.4231/D30000150

Flexible Transition Metal Dichalcogenide Field-Effect Transistor (TMDFET) Model

2016-05-04 03:37:43 | Contributor(s): Morteza Gholipour, Deming Chen | doi:10.4231/D3TM72243

Verilog-A model of flexible transition metal dichalcogenide field-effect transistors (TMDFETs), considering effects when scaling the transistor size down to the 16-nm technology node. This model can be used for circuit-level simulations.

General and Junction Primitives for Verilog-A Compact Models

2015-04-30 19:38:05 | Contributor(s): Colin McAndrew, Geoffrey Coram | doi:10.4231/D3G15TC2J

III-V Tunnel FET Model

2015-04-21 13:49:00 | Contributor(s): Huichu Liu, Vinay Saripalli, Vijaykrishnan Narayanan, Suman Datta | doi:10.4231/D30Z70X8D

JFETIDG Model for Independent Dual-Gate JFETs

2017-07-27 12:55:51 | Contributor(s): Colin McAndrew, Kejun Xia | doi:10.4231/D3KK94F1N

mCell Model

2015-01-20 00:40:32 | Contributor(s): David M. Bromberg, Daniel H. Morris | doi:10.4231/D3CR5ND3Q

MIT TFET compact model including the impacts of non-idealities

2017-05-08 02:34:24 | Contributor(s): Redwan Noor Sajjad, Ujwal Radhakrishna, Dimitri Antoniadis | doi:10.4231/D3XW47X6W

We present a physics based compact model for Tunnel Field Effect Transistor (TFET), MIT TFET compact model, that captures the device physics of TFETs including non-idealities such as the interface Trap Assisted Tunneling (TAT) and intrinsic band steepness. The model matches several recent...

MIT Virtual Source GaN HEMT-High Voltage (MVSG-HV) compact model

2015-08-31 13:49:15 | Contributor(s): Ujwal Radhakrishna, Dimitri Antoniadis | doi:10.4231/D3086365H

MIT Virtual Source GaNFET-RF ( MVSG-RF) Model

2014-10-23 18:43:25 | Contributor(s): Ujwal Radhakrishna, Dimitri Antoniadis | doi:10.4231/D3G15TC12

MIT Virtual Source Negative Capacitance (MVSNC) model

2017-03-07 01:06:52 | Contributor(s): Ujwal Radhakrishna, Asif Islam Khan, Sayeef Salahuddin, Dimitri Antoniadis | doi:10.4231/D3K649T9T

MVS III-V HEMT model

2015-12-01 16:40:24 | Contributor(s): Shaloo Rakheja, Dimitri Antoniadis | doi:10.4231/D37S7HT39

MVS Nanotransistor Model

2015-12-01 15:13:44 | Contributor(s): Shaloo Rakheja, Dimitri Antoniadis | doi:10.4231/D3416T10C

Click a tag to see only publications with that tag.