Publications: All

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  1. Compact model for Perpendicular Magnetic Anisotropy Magnetic Tunnel Junction

    2018-04-16 17:57:57 | Compact Models | Contributor(s): You WANG, Yue ZHANG, Weisheng Zhao, Jacques-Olivier Klein, Dafiné Ravelosona, Hao Cai, Lirida Naviner

    This STT PMA MTJ model integrates the physical models of static, dynamic behaviors and reliability issues, which can be used to perform more accurate and complex reliability analysis of complex hybrid circuits before fabrication.
  2. A Verilog-A Compact Model for Negative Capacitance FET

    2017-11-09 16:55:37 | Compact Models | Contributor(s): Muhammad Abdul Wahab, Muhammad A. Alam | doi:10.4231/D3QZ22K3Z

    The NC-FET compact model is a semi-physical verilog-A model of the negative capacitance transistor. We developed this self-consistent model with BSIM4/MVS and Landau theory. This model is useful to design NC-FET for high speed and low power...
  3. Stanford 2D Semiconductor (S2DS) Transistor Model

    2016-04-05 01:09:39 | Compact Models | Contributor(s): Saurabh Vinayak Suryavanshi, Eric Pop | doi:10.4231/D3ZC7RV9X

    The Stanford 2D Semiconductor (S2DS) model is a physics-based, compact model for field-effect transistors (FETs) based on two-dimensional (2D) semiconductors such as MoS2.