2T-nC QNRO FeRAM Model

2024-02-14 21:04:06 | Compact Models | Contributor(s): Yi Xiao, Vijaykrishnan Narayanan, Kai Ni | doi:10.21981/NWCZ-2Y11

2 Transistor-n Capacitor (2T-nC) quasi-nondestructive readout (QNRO) FeRAM model is a compact model which can capture the characteristics of the 2T-nC device and is compatible with many circuit simulation platforms.

A Verilog-A Compact Model for Negative Capacitance FET

2017-11-09 16:55:37 | Compact Models | Contributor(s): Muhammad Abdul Wahab, Muhammad A. Alam | doi:10.4231/D3QZ22K3Z

The NC-FET compact model is a semi-physical verilog-A model of the negative capacitance transistor. We developed this self-consistent model with BSIM4/MVS and Landau theory. This model is useful to design NC-FET for high speed and low power...

All-Optical Switching Compact Model

2021-05-02 01:04:32 | Compact Models | Contributor(s): Johan Pelloux-Prayer, Farshad Moradi | doi:10.21981/XFRW-A070

This is a VerilogA compact model that represent All-Optical switching event for use of All-Optical Switching layer in an MTJ structure.

Ambipolar Virtual Source Compact Model for Graphene FETs

2014-10-23 18:47:56 | Compact Models | Contributor(s): Shaloo Rakheja, Dimitri Antoniadis | doi:10.4231/D3MS3K273

This is a compact physics-based ambipolar-virtual-source (AVS) model that describes carrier transport in both unipolar and ambipolar regimes in quasi-ballistic graphene field-effect transistors (GFETs).

Berkeley VCSEL Compact Model

2015-06-02 18:58:52 | Compact Models | Contributor(s): Adair Gerke, Connie J. Chang-Hasnain | doi:10.4231/D3T43J40H

The U.C. Berkeley Vertical Cavity Surface Emitting Laser (VCSEL) Compact Model provides a circuit simulator compatible Verilog-A model of VCSEL lasers, primarily for use in designing direct-modulation driver circuits for optical interconnects.

CCAM Compact Carbon Nanotube Field-Effect Transistor Model

2022-05-16 23:39:34 | Compact Models | Contributor(s): Michael Schroter, Manojkumar Annamalai, Max Haferlach, Martin Claus | doi:10.21981/5E9F-2S90

CCAM is a semi-physical carbon nanotube field-effect transistor model applicable for digital, analog and high frequency applications.

cmIPCS: Compact Model of Four-Terminal, Inline, Indirectly Heated, Phase Change RF Switches

2021-03-07 15:53:32 | Compact Models | Contributor(s): Nicolas Wainstein, Guy Ankonina, Shahar Kvatinsky, Eilam Yalon | doi:10.21981/VAQ8-4A97

cmIPCS is a compact model of Four-Terminal, Inline, Indirectly Heated Phase Change RF Switches validated by finite element method simulations and measurements of IPCS devices.

CNRS - Carbon Nanotube Interconnect RC Model

2017-11-09 16:25:31 | Compact Models | Contributor(s): Jie LIANG, Aida Todri | doi:10.4231/D3SJ19T14

This CNT Interconnect Compact Model includes a solid physics understanding and electrical modeling for pristine and doped SWCNT as Interconnect applications. SWCNT resistance and capacitance are modeled in Verilog-A.

Compact Model Vortex-STNO

2022-11-17 15:52:11 | Compact Models | Contributor(s): Sonal Shreya, Farshad Moradi | doi:10.21981/EC5D-JZ92

we present a Verilog-A-based analytical model of a vortex spin-torque nano oscillator (V-STNO) for enabling circuit-level simulation. The model presented here is functional for both linear and nonlinear dynamics of the magnetic vortex core.

Database of The Big Ideas in Nanoscale Science and Engineering (NSTA)

2016-03-25 20:23:57 | Datasets | Contributor(s): Tanya Faltens | doi:10.4231/D3HH6C69T

This database lists the 9 Big Ideas of Nanoscale Science and Engineering along with the Learning Goals associated with each Big Idea. Instructors should refer to the NSTA publication, "The Big Ideas of Nanoscale Science & Engineering, A Guidebook for Secondary Teachers" (c) 2009 NSTA Press (156...

Double-Clamped Silicon NEMS Resonators Model

2016-03-07 16:45:06 | Compact Models | Contributor(s): Yanfei Shen, Scott Calvert, Jeffrey F. Rhoads, Saeed Mohammadi | doi:10.4231/D37659G7N

This model is built for a silicon-based, double-clamped (source and drain), double-gate beam. The model takes into account capacitive modulation with the two gates, piezoresistive modulation through the beam and electrical parasitic elements.

EPFL HEMT MODEL

2020-05-04 16:05:24 | Compact Models | Contributor(s): Farzan Jazaeri, Jean-Michel Sallese, Majid Shalchian, Matthias Bucher, Nikolaos Makris, Bertrand Parvais | doi:10.21981/PSE5-PP70

The EPFL HEMT Model is a design-oriented charge-based model for dc operation of AlGaAs/GaAs and AlGaN/GaN-based high-mobility field-effect transistors. The intrinsic model is physics-based and the central concept is based on charge linear approximation.

FET pH Sensor Model

2015-06-04 14:39:01 | Compact Models | Contributor(s): Piyush Dak, Muhammad A. Alam | doi:10.4231/D30000150

The FET pH sensor model is a surface potential compact model for FET based pH sensors that accurately describes the physics of electrolyte and surface charges that respond to pH.

Flexible Transition Metal Dichalcogenide Field-Effect Transistor (TMDFET) Model

2016-05-04 03:37:43 | Compact Models | Contributor(s): Morteza Gholipour, Deming Chen | doi:10.4231/D3TM72243

Verilog-A model of flexible transition metal dichalcogenide field-effect transistors (TMDFETs), considering effects when scaling the transistor size down to the 16-nm technology node.

Florida Ferroelectric Tunnel Junction Device Model

2020-10-02 02:40:45 | Compact Models | Contributor(s): Tong Wu, Jing Guo | doi:10.21981/6TFD-GW48

A compact model of the Ferroelectric Tunnel Junctions (FTJs) device is constructed, using the Wentzel–Kramers–Brillouin (WKB) approximation for tunneling current calculation.

General and Junction Primitives for Verilog-A Compact Models

2015-04-30 19:38:05 | Compact Models | Contributor(s): Colin McAndrew, Geoffrey Coram | doi:10.4231/D3G15TC2J

Useful macros and analog function building blocks for compact models.

III-V Tunnel FET Model

2015-04-21 13:49:00 | Compact Models | Contributor(s): Huichu Liu, Vinay Saripalli, Vijaykrishnan Narayanan, Suman Datta | doi:10.4231/D30Z70X8D

The III-V Tunnel FET Model is a look-up table based model, where the device current and capacitance characteristics are obtained from calibrated TCAD Sentaurus simulation.

JFETIDG Model for Independent Dual-Gate JFETs

2017-07-27 12:55:51 | Compact Models | Contributor(s): Colin McAndrew, Kejun Xia | doi:10.4231/D3KK94F1N

JFETIDG is a compact model for independent dual-gate JFETs. It is also applicable to: resistors with metal shields; the drift region of LDMOS transistors; the collector resistance of vertical bipolar transistors; and junctionless MOS transistors.