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  1. MVS III-V HEMT model

    2015-12-01 16:40:24 | Compact Models | Contributor(s): Shaloo Rakheja, Dimitri Antoniadis | doi:10.4231/D37S7HT39

    The MIT Virtual Source (MVS) model is a semi-empirical compact model for nanoscale transistors that accurately describes the physics of quasi-ballistic transistors with only a few physical parameters. This model is designed for HEMT.
  2. MVS Nanotransistor Model

    2015-12-01 15:13:44 | Compact Models | Contributor(s): Shaloo Rakheja, Dimitri Antoniadis | doi:10.4231/D3416T10C

    The MIT Virtual Source (MVS) model is a semi-empirical compact model for nanoscale transistors that accurately describes the physics of quasi-ballistic transistors with only a few physical parameters.
  3. MVS Nanotransistor Model (Silicon)

    2015-12-02 17:03:59 | Compact Models | Contributor(s): Shaloo Rakheja, Dimitri Antoniadis | doi:10.4231/D3RR1PN6M

    The MIT Virtual Source (MVS) model is a semi-empirical compact model for nanoscale transistors that accurately describes the physics of quasi-ballistic transistors with only a few physical parameters.
  4. Nano Education Resources

    2017-03-14 15:32:54 | Datasets | Contributor(s): Quinn Spadola, Lisa Friedersdorf | doi:10.4231/D3K35MF70

    This is a database of nanoeducation resources that can be searched, filtered, and sorted. Resources are listed by topic area, grade level, core discipline, STEM content area, and resource type.
  5. NISE Net NanoDays Kit Database

    2016-01-22 21:38:38 | Datasets | Contributor(s): Tanya Faltens

    This is a database of NISE Net NanoDays Kits, with links to information about the kits and instructional videos. This database was created in 2014 and there may be some additional content added since then. This database contains all the...
  6. nMOSFET RF and noise model on standard 45nm SOI technology

    2017-01-05 16:57:48 | Compact Models | Contributor(s): Yanfei Shen, Saeed Mohammadi | doi:10.4231/D3833N04K

    A compact scalable model suitable for predicting high frequency noise and nonlinear behavior of N-type Metal Oxide Semiconductor (NMOS) transistors is presented.
  7. NNCI Modeling/Simulation Tools List

    2017-07-26 16:54:45 | Datasets | Contributor(s): NNCI Computation | doi:10.4231/D3930NX3C

    NNCI Modeling/Simulation Tools List provides a collective inventory of modeling and simulation resources and capabilities across NNCI sites and includes helpful information such as a point of contact for each tool, any access restrictions, and academic citations.
  8. Non-Faradaic Impedance-based Biosensor Model

    2015-09-26 14:54:22 | Compact Models | Contributor(s): Piyush Dak, Muhammad A. Alam | doi:10.4231/D3PR7MV7M

    The non-Faradaic impedance model is a physics-based compact model that describes the small-signal operation of a sensor that relies on electrochemical detection of analyte molecules.
  9. Notre Dame TFET Model

    2017-09-01 17:35:14 | Compact Models | Contributor(s): Hao Lu, Trond Ytterdal, Alan Seabaugh | doi:10.4231/D3CF9J852

    Notre Dame TFET compact model version 2.1.0.
  10. Optical Ring Filter (ORF) Modspec Compact Model

    2015-09-24 18:35:26 | Compact Models | Contributor(s): Lily Weng, Tianshi Wang | doi:10.4231/D3125QB06

    The MIT ORF Modspec Compact Model provides a compact model of an optical ring filter on Model and Algorithm Prototyping Platform. It describes transmission behavior of the filter when operating with several hundreds terahertz light signals.
  11. Optical Ring Modulator ModSpec Compact Model

    2017-01-05 16:54:03 | Compact Models | Contributor(s): Lily Weng, Tianshi Wang | doi:10.4231/D31N7XN9P

    The optical ring modulator presented here is a vertical junction resonant microring/disk modulator which can achieve high modulation speed, lower power consumption and compact size. A Matlab-based ModSpec compact model is developed and simulated.
  12. Optical Ring Modulator with MIT Virtual Source ModSpec Compact Model

    2017-05-03 21:19:10 | Compact Models | Contributor(s): Lily Weng | doi:10.4231/D3PK0732D

    In this release, we apply MIT virtual source model in the driver circuits of Optical Ring Modulators.
  13. Peking University Resistive-Switching Random Access Memory (RRAM) Verilog-A Model

    2019-06-18 16:16:14 | Compact Models | Contributor(s): Weijie Xu, Yudi Zhao, Haitong Li, Jinfeng Kang, Xiaoyan Liu, Peng Huang | doi:10.21981/GG8R-0N73

    The Peking University RRAM Model is a SPICE-compatible compact model which is designed for simulation of metal-oxide based RRAM devices. It captures typical DC and AC electrical behaviors of the RRAM devices with physics-based model descriptions.
  14. Physics-Based Compact Model for Dual-Gate Bilayer Graphene FETs

    2016-04-07 19:19:34 | Compact Models | Contributor(s): Jorge-Daniel Aguirre Morales, Sébastien Frégonèse, Chhandak Mukherjee, Cristell Maneux, Thomas Zimmer | doi:10.4231/D30C4SM1H

    A compact model for simulation of Dual-Gate Bilayer Graphene FETs based on physical equations.
  15. Purdue Nanoelectronics Research Laboratory Magnetic Tunnel Junction Model

    2014-10-23 20:13:09 | Compact Models | Contributor(s): Xuanyao Fong, Sri Harsha Choday, Panagopoulos Georgios, Charles Augustine, Kaushik Roy | doi:10.4231/D33R0PV04

    This is the Verilog-A model of the magnetic tunnel junction developed by the Nanoelectronics Research Laboratory at Purdue University.
  16. Purdue Solar Cell Model (PSM) - CIGS/CdTe

    2018-04-16 18:09:56 | Compact Models | Contributor(s): Xingshu Sun, Sourabh Dongaonkar, Raghu Vamsi Krishna Chavali, Suhas Venkat Baddela, Mark Lundstrom, Muhammad Ashraful Alam | doi:10.4231/D3NC5SD6H

    Purdue Solar Cell Model (PSM), previously known as the TAG (technology agnostic) model, is a suite of compact models developed for solar cells of c-Si, a-Si, perovskites, CIGS, CdTe, and HIT. This package is for CIGS/CdTe.
  17. Purdue Solar Cell Model (PSM) - HIT

    2018-04-16 18:09:10 | Compact Models | Contributor(s): Xingshu Sun, Raghu Vamsi Krishna Chavali, Sourabh Dongaonkar, Suhas Venkat Baddela, Mark Lundstrom, Muhammad Ashraful Alam | doi:10.4231/D3CV4BS80

    Purdue Solar Cell Model (PSM), previously known as the TAG (technology agnostic) model, is a suite of compact models developed for solar cells of c-Si, a-Si, perovskites, CIGS, CdTe, and HIT. This package is for perovskite and a-Si solar cells.
  18. Purdue Solar Cell Model (PSM) - Perovskite/a-Si (p-i-n)

    2018-04-16 17:56:34 | Compact Models | Contributor(s): Xingshu Sun, Raghu Vamsi Krishna Chavali, Sourabh Dongaonkar, Suhas Venkat Baddela, Mark Lundstrom, Muhammad Ashraful Alam | doi:10.4231/D3862BC8C

    Purdue Solar Cell Model (PSM), previously known as the TAG (technology agnostic) model, is a suite of compact models developed for solar cells of c-Si, a-Si, perovskites, CIGS, CdTe, and HIT. This package is for perovskite and a-Si solar cells.
  19. Purdue Solar Cell Model (PSM) - Si

    2018-04-16 18:09:34 | Compact Models | Contributor(s): Mark Lundstrom, Muhammad Ashraful Alam, Raghu Vamsi Krishna Chavali, Sourabh Dongaonkar, Suhas Venkat Baddela, Xingshu Sun | doi:10.4231/D3HM52M18

    Purdue Solar Cell Model (PSM), previously known as the TAG (technology agnostic) model, is a suite of compact models developed for solar cells of c-Si, a-Si, perovskites, CIGS, CdTe, and HIT. This package is for c-Si solar cells.
  20. R3

    2014-11-21 15:20:44 | Compact Models | Contributor(s): Colin McAndrew | doi:10.4231/D3QB9V64G

    Compact model for polysilicon (poly) resistors, 3-terminal JFETs, and diffused resistors.