Publications: All

  1. A Verilog-A Compact Model for Negative Capacitance FET

    2017-11-09 16:55:37 | Compact Models | Contributor(s): Muhammad Abdul Wahab, Muhammad A. Alam | doi:10.4231/D3QZ22K3Z

    The NC-FET compact model is a semi-physical verilog-A model of the negative capacitance transistor. We developed this self-consistent model with BSIM4/MVS and Landau theory. This model is useful to design NC-FET for high speed and low power...
  2. Ambipolar Virtual Source Compact Model for Graphene FETs

    2014-10-23 18:47:56 | Compact Models | Contributor(s): Shaloo Rakheja, Dimitri Antoniadis | doi:10.4231/D3MS3K273

    This is a compact physics-based ambipolar-virtual-source (AVS) model that describes carrier transport in both unipolar and ambipolar regimes in quasi-ballistic graphene field-effect transistors (GFETs).
  3. Berkeley VCSEL Compact Model

    2015-06-02 18:58:52 | Compact Models | Contributor(s): Adair Gerke, Connie J. Chang-Hasnain | doi:10.4231/D3T43J40H

    The U.C. Berkeley Vertical Cavity Surface Emitting Laser (VCSEL) Compact Model provides a circuit simulator compatible Verilog-A model of VCSEL lasers, primarily for use in designing direct-modulation driver circuits for optical interconnects.
  4. CCAM Compact Carbon Nanotube Field-Effect Transistor Model

    2015-10-07 14:56:43 | Compact Models | Contributor(s): Michael Schroter, Max Haferlach, Martin Claus | doi:10.4231/D3VD6P595

    CCAM is a semi-physical carbon nanotube field-effect transistor model applicable for digital, analog and high frequency applications.
  5. CNRS - Carbon Nanotube Interconnect RC Model

    2017-11-09 16:25:31 | Compact Models | Contributor(s): Jie LIANG, Aida Todri | doi:10.4231/D3SJ19T14

    This CNT Interconnect Compact Model includes a solid physics understanding and electrical modeling for pristine and doped SWCNT as Interconnect applications. SWCNT resistance and capacitance are modeled in Verilog-A.
  6. Compact model for Perpendicular Magnetic Anisotropy Magnetic Tunnel Junction

    2018-04-16 17:57:57 | Compact Models | Contributor(s): You WANG, Yue ZHANG, Weisheng Zhao, Jacques-Olivier Klein, Dafiné Ravelosona, Hao Cai, Lirida Naviner

    This STT PMA MTJ model integrates the physical models of static, dynamic behaviors and reliability issues, which can be used to perform more accurate and complex reliability analysis of complex hybrid circuits before fabrication.
  7. Compact Model of Dielectric Breakdown in Spin Transfer Torque Magnetic Tunnel Junction

    2018-04-16 17:57:33 | Compact Models | Contributor(s): You Wang, Yue Zhang, Weisheng Zhao, Dafine Ravelosona, Jacques-Olivier Klein, Lirida Naviner, Hao Cai

    Spin Transfer Torque Magnetic Tunnel Junction (STT-MTJ) is a promising candidate for non-volatile memories thanks to its high speed, low power, infinite endurance and easy integration with CMOS circuits.
  8. Database of The Big Ideas in Nanoscale Science and Engineering (NSTA)

    2016-03-25 20:23:57 | Datasets | Contributor(s): Tanya Faltens | doi:10.4231/D3HH6C69T

    This database lists the 9 Big Ideas of Nanoscale Science and Engineering along with the Learning Goals associated with each Big Idea. Instructors should refer to the NSTA publication, "The Big Ideas of Nanoscale Science & Engineering, A Guidebook for Secondary Teachers" (c) 2009 NSTA Press (156...
  9. Double-Clamped Silicon NEMS Resonators Model

    2016-03-07 16:45:06 | Compact Models | Contributor(s): Yanfei Shen, Scott Calvert, Jeffrey F. Rhoads, Saeed Mohammadi | doi:10.4231/D37659G7N

    This model is built for a silicon-based, double-clamped (source and drain), double-gate beam. The model takes into account capacitive modulation with the two gates, piezoresistive modulation through the beam and electrical parasitic elements.
  10. FET pH Sensor Model

    2015-06-04 14:39:01 | Compact Models | Contributor(s): Piyush Dak, Muhammad A. Alam | doi:10.4231/D30000150

    The FET pH sensor model is a surface potential compact model for FET based pH sensors that accurately describes the physics of electrolyte and surface charges that respond to pH.
  11. Flexible Transition Metal Dichalcogenide Field-Effect Transistor (TMDFET) Model

    2016-05-04 03:37:43 | Compact Models | Contributor(s): Morteza Gholipour, Deming Chen | doi:10.4231/D3TM72243

    Verilog-A model of flexible transition metal dichalcogenide field-effect transistors (TMDFETs), considering effects when scaling the transistor size down to the 16-nm technology node.
  12. General and Junction Primitives for Verilog-A Compact Models

    2015-04-30 19:38:05 | Compact Models | Contributor(s): Colin McAndrew, Geoffrey Coram | doi:10.4231/D3G15TC2J

    Useful macros and analog function building blocks for compact models.
  13. III-V Tunnel FET Model

    2015-04-21 13:49:00 | Compact Models | Contributor(s): Huichu Liu, Vinay Saripalli, Vijaykrishnan Narayanan, Suman Datta | doi:10.4231/D30Z70X8D

    The III-V Tunnel FET Model is a look-up table based model, where the device current and capacitance characteristics are obtained from calibrated TCAD Sentaurus simulation.
  14. JFETIDG Model for Independent Dual-Gate JFETs

    2017-07-27 12:55:51 | Compact Models | Contributor(s): Colin McAndrew, Kejun Xia | doi:10.4231/D3KK94F1N

    JFETIDG is a compact model for independent dual-gate JFETs. It is also applicable to: resistors with metal shields; the drift region of LDMOS transistors; the collector resistance of vertical bipolar transistors; and junctionless MOS transistors.
  15. mCell Model

    2015-01-20 00:40:32 | Compact Models | Contributor(s): David M. Bromberg, Daniel H. Morris | doi:10.4231/D3CR5ND3Q

    This model is a hybrid physics/empirical compact model that describes digital switching behavior of an mCell logic devices, where a write current moves a domain wall to switch the resistance of a magnetic tunnel junction between stable states.
  16. MIT TFET compact model including the impacts of non-idealities

    2017-05-08 02:34:24 | Compact Models | Contributor(s): Redwan Noor Sajjad, Ujwal Radhakrishna, Dimitri Antoniadis | doi:10.4231/D3XW47X6W

    We present a compact model for tunnel FET that for the first time fits experimental transfer and output characteristics including the impact of non-idealities such as trap assisted tunneling and intrinsic band steepness.
  17. MIT Virtual Source GaN HEMT-High Voltage (MVSG-HV) compact model

    2015-08-31 13:49:15 | Compact Models | Contributor(s): Ujwal Radhakrishna, Dimitri Antoniadis | doi:10.4231/D3086365H

    MIT Virtual Source GaN HEMT-High Voltage (MVSG-HV) model is a charge based physical model for HV-GaN HEMTs suitable for power switching applications.
  18. MIT Virtual Source GaNFET-RF ( MVSG-RF) Model

    2014-10-23 18:43:25 | Compact Models | Contributor(s): Ujwal Radhakrishna, Dimitri Antoniadis | doi:10.4231/D3G15TC12

    The MVS-G-RF GaN HEMT model is a self-consistent transport/capacitance model for scaled GaN HEMT devices used in RF applications.
  19. MIT Virtual Source Negative Capacitance (MVSNC) model

    2017-03-07 01:06:52 | Compact Models | Contributor(s): Ujwal Radhakrishna, Asif Islam Khan, Sayeef Salahuddin, Dimitri Antoniadis | doi:10.4231/D3K649T9T

    MIT Virtual Source Negative FET (MVSNC) model is a compact model for negative capacitance transistors that use a FE-oxide in the gate stack to achieve internal voltage amplification and steep subthreshold swing.
  20. Multi-walled/Single-walled Carbon Nanotube (MWCNT/SWCNT) Interconnect Lumped Compact Model Considering Defects, Contact resistance and Doping impact

    2018-07-18 16:10:04 | Compact Models | Contributor(s): Rongmei Chen, Jie LIANG, Jaehyun Lee, Vihar Georgiev, Aida Todri | doi:10.4231/D3183448N

    In this project, we present SWCNT and MWCNT interconnect compact models. These models consider the impact of CNT defects, the chirality and contact resistance between CNT-electrode (Pd) on CNT interconnect performances and power consumption. Variabilities